Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Deok Hui Nam"'
Autor:
Yura Kang, Deok-Hui Nam, Chang-Hyoung Yoo, Myung-Hyun Lee, Suklyun Hong, Seong-Min Jeong, Won-Seon Seo
Publikováno v:
Journal of Crystal Growth. 485:78-85
In this study, we thermodynamically reviewed the suitable growth process conditions of α-SiC in the Si-C-H system using tetramethylsilane (TMS) and in the Si-C-H-Cl system using methyltrichlorosilane (MTS). In the Si-C-H-Cl system, pure solid SiC wa
Autor:
Deok Hui Nam, Ji Young Yoon, Chang Hyoung Yoo, Won-Jae Lee, Byeong Geun Kim, Won Seon Seo, Seong-Min Jeong, Myung Hyun Lee, Yong Gun Shul
Publikováno v:
Journal of Crystal Growth. 435:84-90
Tetramethylsilane (TMS) was recently proposed as a safe precursor for SiC single crystal growth through high temperature chemical vapor deposition (HTCVD). Because the C content of TMS is much higher than Si, the exhaust gas from the TMS-based HTCVD
Autor:
Won-Seon Seo, Chang-Hyoung Yoo, Jiyoung Yoon, Seong-Min Jeong, Byeong Geun Kim, Deok-Hui Nam, Myung-Hyun Lee
Publikováno v:
CrystEngComm. 17:3148-3152
High temperature chemical vapor deposition (HTCVD), an alternate method for crystal growth of SiC, was recently deemed to be a safe method when tetramethylsilane (TMS) is used. In this study, we report on the characteristics of condensation of vapor
Publikováno v:
SCIENTIFIC REPORTS(7)
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Scientific Reports
We introduce a one-step growth method for producing multilayer-graphene hollow nanospheres via a high-temperature chemical vapor deposition process using tetramethylsilane as an organic precursor. When the SiC nuclei were grown under an excess carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a9a0a338ffdf918d936ed7e9b43ee7f
http://open-repository.kisti.re.kr/cube/handle/open_repository/482664.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/482664.do
Autor:
Myung-Hyun Lee, Won-Jae Lee, Cheol-Woong Yang, Byeong Geun Kim, Won-Seon Seo, Jiyoung Yoon, Seong-Min Jeong, Deok-Hui Nam
Publikováno v:
Crystal Growth & Design. 14:5569-5574
SiC single bulk crystals were grown using a high-temperature chemical vapor deposition (HTCVD) method, with SiH4 and hydrocarbons as the source materials. SiH4 is a pyrophoric gas, which frequently causes fatal accidents in experiments. In this study
Autor:
Young Joon Yoon, Seong-Min Jeong, Myung-Hyun Lee, Won-Seon Seo, Byeong Geun Kim, Jiyoung Yoon, Kyung-Hun Kim, Deok-Hui Nam
Publikováno v:
Applied Physics Express. 7:025501
Tetramethylsilane (TMS) is a common liquid-phase precursor that is used in the synthesis of β-SiC by chemical vapor deposition (CVD). At temperatures above 1500 °C, however, it has been shown that C is also formed together with SiC. In this study,
Autor:
Deok-Hui Nam, Byeong Geun Kim, Ji-Young Yoon, Myung-Hyun Lee, Won-Seon Seo, Seong-Min Jeong, Cheol-Woong Yang, Won-Jae Lee
Publikováno v:
Crystal Growth & Design; Nov2014, Vol. 14 Issue 11, p5569-5574, 6p