Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Deog-Bae Kim"'
Autor:
Myungsun Kim, Wonki Lee, Young-Ho Kim, Sang-Ho Cha, Jae Hyun Kim, Jong-Chan Lee, Jeong-Sik Kim, Hyo-Jin Yun, Dong-Gyun Kim, Jae-Woo Lee, Hae-Sung Sohn, Boo-Deuk Kim, Deog-Bae Kim
Publikováno v:
Macromolecular Research. 19:722-728
ArF photoresist polymers were prepared via reversible addition-fragmentation chain transfer (RAFT) polymerization and free radical polymerization (FRP). Three methacrylates with lithographic functionalities including 2-ethyl-2-adamantyl methacrylate
Autor:
In-Ho Park, Young-Min Kang, Jung-Youl Lee, Deog-Bae Kim, Eun Jin Kim, Hye-Keun Oh, Jae Hyun Kim
Publikováno v:
Journal of the Korean Physical Society. 55:463-466
Publikováno v:
SPIE Proceedings.
Recently published experimental results indicate that current resists seem to be very hard to meet the International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Width Roughness (LWR) and Sensitivity (RLS) simultaneously. This RLS tra
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
To obtain high resolution and sensitivity and low line width roughness (LWR), the resist film homogeneity is thought to be the key requirement of extreme ultraviolet lithography (EUVL) resist materials. We have synthesized of a new class of chemicall
Publikováno v:
SPIE Proceedings.
Mask defect is one of the biggest problems in Extreme Ultraviolet Lithography (EUV) technology. EUV mask must be free of small defects, requiring development of new inspection tools and low defect fabrication processes. So, we studied the influences
Autor:
Hyun-Jin Kim, Jae-Woo Lee, Yool Kang, Jae-Hyun Kim, Deog-Bae Kim, Jung-Yeol Lee, Geun-Jong Yu, Sang-Jeoung Kim
Publikováno v:
SPIE Proceedings.
As the feature size becomes smaller, it is difficult for the lithography progress to keep pace with the acceleration of design rule shrinkage and high integration of memory device. Extreme Ultra Violet Lithography (EUVL) is a preferred solution for t
Autor:
Jae Hyun Kim, Jung Youl Lee, Keun Do Ban, Deog bae Kim, Sang Hyang Lee, Jeong Woo Kim, Jae-Woo Lee, Seung Keun Oh, Sang Soo Kim, Seoung-Chan Moon, Cheol Kyu Bok, Jung Woo Kim
Publikováno v:
SPIE Proceedings.
In the past several years, ArF immersion lithography has been developed rapidly for practical applications. ArF immersion lithography is now researched actively and developed for the purpose of implementing the 45-nm technology node. For the device d
Autor:
Jae-Woo Lee, Sang Soo Kim, Jung Woo Kim, Deog-Bae Kim, Jung Youl Lee, Jeong Woo Kim, Keun Do Ban, Jae-Hyun Kim, Seung-Chan Moon, Seung Keun Oh, Sang Hyang Lee, Chan Sik Park, Cheol Kyu Bok
Publikováno v:
SPIE Proceedings.
ArF Immersion lithography is the most promising technology for 45nm node and possibly beyond. However, serious issues in ArF immersion lithography for semiconductor mass production still exist. One of the issues is immersion specific defects, which a
Autor:
Eun Kyung Son, Jae-Hyun Kim, Chan Sik Park, Jung Youl Lee, Geunsu Lee, Seung-Chan Moon, Jeong Woo Kim, Seung Keun Oh, Deog Bae Kim, Jae-Woo Lee
Publikováno v:
SPIE Proceedings.
Post exposure bake temperature sensitivity (PEB sensitivity) becomes important as the pattern pitch size shrinks gradually. There are several factors affecting the PEB sensitivity including acidity and diffusion of photogenerated acid, activation ene
Autor:
Jae-Woo Lee, Deog-Bae Kim, Seung Keun Oh, Myoung Hwan Park, Sang Hyang Lee, Jung Woo Kim, Seung-Chan Moon, Young Ho Jeong, Sang Soo Kim, Jae Hyun Kim, Geunsu Lee
Publikováno v:
SPIE Proceedings.
Immersion materials have to overcome immersion-issues for successful wet process introduction to semiconductor mass production. Component-leaching issue is one of the most influential wet process huddles, which is related to immersion-liquid and proj