Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Deodatta Vinayak Shenai-Khatkhate"'
Publikováno v:
Journal of Crystal Growth. 310:2395-2398
From the vapor pressure equation of a metalorganic precursor, its partial pressure is calculated. The accuracy of that vapor pressure equation is therefore important when calculating the deposition efficiency of a precursor. Knowing the exact value o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c46abd170aeca78a8fbdb564dd0854
https://doi.org/10.1016/j.jcrysgro.2007.11.196
https://doi.org/10.1016/j.jcrysgro.2007.11.196
Autor:
Robert A. Ware, Ronald L. DiCarlo, Egbert Woelk, Alan G. Keiter, Deodatta Vinayak Shenai-Khatkhate, Charles J. Marsman, Robert F. Polcari
Publikováno v:
Journal of Crystal Growth. 287:679-683
Trimethylindium (TMI) is the preferred precursor for the deposition of indium containing layers by organo-metallic vapor phase epitaxy (OMVPE) because of its higher vapor pressure and its ability to transport readily into vapor phase. However, mainta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba733dcafac28f6a7a1dc8cadf21c0e
https://doi.org/10.1016/j.jcrysgro.2005.10.095
https://doi.org/10.1016/j.jcrysgro.2005.10.095
Autor:
Michael Brendan Power, Bruno Lamare, Deodatta Vinayak Shenai-Khatkhate, Grégoire Beaudoin, Artashes Amamchyan, Ronald L. DiCarlo, Egbert Woelk, Isabelle Sagnes
Publikováno v:
Journal of Crystal Growth. 287:684-687
Germanium and gallium arsenide have long been used in semiconductor structures and electronic devices. While organometallic vapor phase epitaxy (OMVPE) of gallium arsenide on germanium substrate is quite common in the solar cell industry for satellit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::790dae0429658781ece2228087868bb5
https://doi.org/10.1016/j.jcrysgro.2005.10.094
https://doi.org/10.1016/j.jcrysgro.2005.10.094
Publikováno v:
Journal of Crystal Growth. 272:816-821
As metalorganic vapor-phase epitaxy (MOVPE) is becoming well-established production technology, there are equally growing concerns associated with its bearing on personnel and community safety, environmental impact and maximum quantities of hazardous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd227637f496d64e48579dca59db4ea3
https://doi.org/10.1016/j.jcrysgro.2004.09.007
https://doi.org/10.1016/j.jcrysgro.2004.09.007
Autor:
Deodatta Vinayak Shenai-Khatkhate, David J. Cole-Hamilton, Peter N. Culshaw, William Bell, Janet E. Hails, A. E. D. Mcqueen, John C. Walton
Publikováno v:
ChemInform. 23
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fef820c946be3f32c79aee25dace5bc
https://doi.org/10.1002/chin.199235236
https://doi.org/10.1002/chin.199235236
Homolytic reactions of diorganotellurium and diorganoditellurium compounds in solution; an EPR study
Autor:
A.Ewan D. McQueen, Peter N. Culshaw, Deodatta Vinayak Shenai-Khatkhate, John C. Walton, William Bell, Janet E. Hails, David J. Cole-Hamilton
Publikováno v:
Journal of Organometallic Chemistry. 430:43-52
The thermal and photochemical decompositions of dialkyltelluriums and dialkylditelluriums in t-butylbenzene solvent have been studied by, EPR spectroscopy. On photolysis, di-t-butyl, diallyl, allyl methyl, and dibenzyl tellurium showed EPR spectra of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47f74c772d4a1be1addb9092aa190d7
https://doi.org/10.1016/0022-328x(92)80094-e
https://doi.org/10.1016/0022-328x(92)80094-e
Autor:
David J. Cole-Hamilton, Deodatta Vinayak Shenai-Khatkhate, A.Ewan D. McQueen, J. Brian Mullin, John C. Walton, Peter N. Culshaw
Publikováno v:
Journal of Crystal Growth. 107:325-330
Unsymmetrical dialkyltellurides of type RTeR′ suitable for use as precursors in the metalorganic vapour phase epitaxy (MOVPE) of cadmium mercury telluride (CMT) can be prepared by an alkyl exchange process. For certain organotellurium compounds, re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c011f56211ab44aa69ce6bdb6e0a02
https://doi.org/10.1016/0022-0248(91)90478-n
https://doi.org/10.1016/0022-0248(91)90478-n
Autor:
Deodatta Vinayak Shenai-Khatkhate, J.B. Mullin, A. E. D. Mcqueen, Marjory B. Parker, David J. Cole-Hamilton
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences. 330:173-182
Adduct purification of metal alkyls for use in metal-organic vapour-phase epitaxy is described and shown to give high purity alkyls of Al, Ga, In, Cd, Zn and Te. In most cases involatile Lewis bases are used to form dissociable adducts, but for tellu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::792d2b5f9fc3a23fcb847bdef56ac483
https://doi.org/10.1098/rsta.1990.0011
https://doi.org/10.1098/rsta.1990.0011
Autor:
David J. Cole-Hamilton, J. Brian Mullin, Paul B. Webb, Graham W. Blackmore, Deodatta Vinayak Shenai-Khatkhate
Publikováno v:
Journal of Crystal Growth. 93:744-749
The preparation of a wide range of dialkyltellurium compounds of potential use as the precursors for the epitaxial growth of materials in the CdHgTe system is described. In general these are synthesised by a previously reported route. Methods f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::007ef9d523a6bcb2618e590196c401ba
https://doi.org/10.1016/0022-0248(88)90613-6
https://doi.org/10.1016/0022-0248(88)90613-6
Autor:
David J. Cole-Hamilton, Deodatta Vinayak Shenai-Khatkhate, D.C. Cupertino, E.D. Orrell, J.B. Mullin
Publikováno v:
Journal of Crystal Growth. 77:27-31
The preparation of adducts of Me2Cd and Me2Zn with a range of nitrogen donor ligands has been investigated. Those with two nitrogen atoms, which cannot for geometrical reasons bind to the same metal atom, are shown to give involatile polymeric adduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d73348609a28391452798567e61b0e5
https://doi.org/10.1016/0022-0248(86)90277-0
https://doi.org/10.1016/0022-0248(86)90277-0