Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Denny Duan-Lee Tang"'
Autor:
Kai Shin Li, Yu Shen Yen, J.Y.-C. Sun, Huan Chi Shih, Jeng Hua Wei, Pang Chun Liu, Ya Jui Tsou, Wei-Jen Chen, Denny Duan-Lee Tang, Chee-Wee Liu, Chih-Huang Lai, Jia Min Shieh
Publikováno v:
IEEE Transactions on Electron Devices. 68:6623-6628
A back-end-of-line compatible 400 °C thermally robust perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) memory cell with a tunnel magnetoresistance ratio of 130% is demonstrated. It features an energy-efficient spin-transfer-torqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::347a7659d1fec662e592ec884ebb58a1
https://doi.org/10.1109/ted.2021.3110833
https://doi.org/10.1109/ted.2021.3110833
Autor:
Fang-Ming Chen, Yao-Jen Chang, Shan-Yi Yang, Shyh-Shyuan Sheu, Yi-Hui Su, Hsin-Tsun Wu, Yu-Chen Hsin, Guan-Long Chen, SK Ziaur Rahaman, I-Jung Wang, Kuan-Ming Chen, Denny Duan-Lee Tang, Hsu-Ming Hsiao, Sih-Han Li, Jeng-Hua Wei, Po-Shao Yeh, Chih-I Wu, H. Y. Lee
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We’d built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449d57f227b2ef9bdcc9633b39daf668
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
Autor:
Chungpin Liao, Tsing-Tyan Yang, Tzuen-His Huang, Chung Len Lee, Ting Shien Duh, Lurng Shehng Lee, Denny Duan-Lee Tang
Publikováno v:
IEEE Transactions on Electron Devices. 48:928-934
This paper studies issues related with using high energy protons to create local semi-insulating silicon regions on IC wafers for device isolation and realization of high-Q IC inductors. Topics on two approaches, i.e., one using Al as the radiation m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0552f20920820d493f8e5eb47df123c
https://doi.org/10.1109/16.918241
https://doi.org/10.1109/16.918241
Publikováno v:
IEEE Electron Device Letters. 20:532-534
This paper shows that MOSFET operated in dynamic-threshold (DT) mode (V/sub body/=V/sub gate/) is more suitable for low-noise RF/analog applications than those operated in conventional mode (V/sub body/=V/sub source/). Detailed low-frequency noise pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3cca52ca5e8d1bfe4be5b8bb53ff5f
https://doi.org/10.1109/55.791933
https://doi.org/10.1109/55.791933
Autor:
Chwan-Ying Lee, Chungpin Liao, Tsun-Neng Yang, Tzuen-Hsi Huang, Shan-Ming Lan, Denny Duan-Lee Tang, Li-Fu Lin
Publikováno v:
IEEE Electron Device Letters. 19:461-462
Penetrating proton beams from a compact ion cyclotron (diameter: 1.5 m, height: 2 m) were employed to create local semi-insulating regions within silicon substrates to facilitate device isolation in mixed-mode (analog-digital) integrated circuits (IC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3cea635f63c0b014e161cb1549b097b
https://doi.org/10.1109/55.735746
https://doi.org/10.1109/55.735746
Autor:
Chien-Chung Hung, Ming-Jer Kao, Young-Shying Chen, Yung-Hung Wang, Yuan-Jen Lee, Wei-Chuan Chen, Wen-Chin Lin, Kuei-Hung Shen, Kuo-Lung Chen, Shiuh Chao, Denny Duan-Lee Tang, Ming-Jinn Tsai
Publikováno v:
IEEE Transactions on Electron Devices; Jul2006, Vol. 53 Issue 7, p1530-1538, 9p, 12 Black and White Photographs, 12 Diagrams, 1 Chart, 7 Graphs
Publikováno v:
IEEE Transactions on Electron Devices; 1987, Vol. 34 Issue 8, p1736-1740, 5p
Publikováno v:
IEEE Transactions on Electron Devices. 34:1736-1740
A methodology for bipolar process diagnosis is developed to evaluate advanced shallow profile bipolar technologies. In this method, the emitter-base leakage current (I EBO ) is used as an indicative parameter for the degree of the intrinsic and extri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f167ae1eab513a87eb5bc861fecbde
https://doi.org/10.1109/t-ed.1987.23145
https://doi.org/10.1109/t-ed.1987.23145
Autor:
Chien-Chung Hung, Yuan-Jen Lee, Ming-Jer Kao, Yung-Hung Wang, Rei-Fu Huang, Wei-Chuan Chen, Young-Shying Chen, Kuei-Hung Shen, Ming-Jinn Tsai, Wen-Chin Lin, Denny Duan-Lee Tang, Shiuh Chao
Publikováno v:
Applied Physics Letters; 3/13/2006, Vol. 88 Issue 11, p112501, 3p, 2 Diagrams, 2 Graphs
Publikováno v:
IEEE Electron Device Letters; Oct1999, Vol. 20 Issue 10, p532-534, 3p