Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Dennis Norton"'
Autor:
John P. Prineas, Garrett A. Ejzak, Thomas F. Boggess, Keith W. Goossen, Fouad Kiamilev, Miguel Hernandez, Nicholas Waite, Dennis Norton, Joshua Marks, Sydney Provence, Jonathan Dickason, Rodney McGee, Jake T. Benedict, Kassem Nabha
Publikováno v:
Journal of Display Technology. 12:1139-1144
The demand for high-speed and/or high-temperature infrared (IR) scene projectors has led to the development of systems based on IR light-emitting-diode (LED) arrays. Using mid-wave (3--5 ${\mu {\text{m}}}$ ) superlattice LED arrays, a 512 $\times$ 51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::183fc31ed33be39aba6f1c4111a7536f
https://doi.org/10.1109/jdt.2016.2590563
https://doi.org/10.1109/jdt.2016.2590563
Autor:
Thomas F. Boggess, Jonathon T. Olesberg, Dennis Norton, Russell J. Ricker, L. M. Murray, Andrew Hudson, Sydney Provence, John P. Prineas
Publikováno v:
IEEE Journal of Quantum Electronics. 51:1-6
Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18143001d5e9a18a236406ba0ffe0baf
https://doi.org/10.1109/jqe.2015.2497538
https://doi.org/10.1109/jqe.2015.2497538
Autor:
Dennis Norton, Jonathon T. Olesberg, Thomas F. Boggess, Sydney Provence, John P. Prineas, Russell J. Ricker, L. M. Murray
Publikováno v:
SPIE Proceedings.
InAs/GaSb superlattice light-emitting diodes are a promising technology for progressing the state-of-the art infrared scene projectors. By targeting a specific band of interest, they are able to achieve apparent temperatures greater than that of conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71fbab0c7573f56c25ea5d637df81b4f
https://doi.org/10.1117/12.2258468
https://doi.org/10.1117/12.2258468
512$\,\times\,$512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
Autor:
John P. Prineas, Amal Ikhlassi, Gerry Sullivan, Rodney McGee, Keith W. Goossen, John Lawler, Jonathon T. Olesberg, Jonathan Dickason, Dennis Norton, L. M. Murray, Nicholas Waite, Thomas F. Boggess, Fouad Kiamilev, Edwin J. Koerperick
Publikováno v:
IEEE Journal of Quantum Electronics. 49:753-759
Single element 33×33 μm2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm2/sr was measured corresponding to an apparent temperature grea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ea677d48b724fefda4f7347c5cbb4b
https://doi.org/10.1109/jqe.2013.2272878
https://doi.org/10.1109/jqe.2013.2272878
Autor:
J. T. Olesberg, Joel M. Fastenau, Edwin J. Koerperick, Dmitri Lubyshev, Dennis Norton, Amy W. K. Liu, Yueming Qiu
Publikováno v:
Infrared Physics & Technology. 59:158-162
Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced67abb58588d78e1b6c39e089462bc
https://doi.org/10.1016/j.infrared.2012.12.033
https://doi.org/10.1016/j.infrared.2012.12.033
Autor:
Joe LaVeigne, Greg Matis, Tom Danielson, Scott Goodwin, Dennis Norton, Steve McHugh, Greg Franks, Nicholas Holmes, Tony Vengel, John Lannon
Publikováno v:
SPIE Proceedings.
The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to also develop larger-format infrared emitter arrays to support the testing of systems incorporating these detectors. In addition to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cf83186efce075d2307d1d364974854
https://doi.org/10.1117/12.2225856
https://doi.org/10.1117/12.2225856
Autor:
Edwin J. Koerperick, Thomas F. Boggess, Dennis Norton, John P. Prineas, B. V. Olson, Jonathon T. Olesberg
Publikováno v:
IEEE Journal of Quantum Electronics. 47:50-54
Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm2 mesa are demonstrated. Output power in excess of 600 μ.W was demonstrated from a 520 × 520 μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c632f06bc373b234232bda466ea013
https://doi.org/10.1109/jqe.2010.2072492
https://doi.org/10.1109/jqe.2010.2072492
Publikováno v:
Journal of Crystal Growth. 312:185-191
Growth optimization of unintentionally doped GaSb buffer layers on (1 0 0) GaSb substrates by molecular beam epitaxy is reported. Several growth parameters were varied to determine the optimal oxide desorption and GaSb growth conditions, as well as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7157aa161614f58d4c9b048fa3cdadb7
https://doi.org/10.1016/j.jcrysgro.2009.10.033
https://doi.org/10.1016/j.jcrysgro.2009.10.033
Publikováno v:
Journal of Applied Physics. 121:185701
InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3–5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92507d0821e4d96e14218266179a9ec9
https://doi.org/10.1063/1.4983023
https://doi.org/10.1063/1.4983023