Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dennis Nemeth"'
Publikováno v:
ECS Transactions. 92:117-123
Introduction Wafer drying is the last and critical step in wet wafer surface preparation processes for a product finished with clean and dry surfaces (1). Among various wafer drying technologies, Marangoni drying has been the most commonly used appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd36c6213185915d34926e4e270d23c1
https://doi.org/10.1149/09202.0117ecst
https://doi.org/10.1149/09202.0117ecst
Publikováno v:
Solid State Phenomena. 219:73-77
Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c84ac0ebc9cc30cc49f07950ff09dadb
https://doi.org/10.4028/www.scientific.net/ssp.219.73
https://doi.org/10.4028/www.scientific.net/ssp.219.73
Publikováno v:
Solid State Phenomena. 195:297-300
The semiconductor industry considers wet cleans to be critical surface preparation steps. The Si/SiO2 interface, for example, is very critical to achieve high gate oxide integrity and avoid leakage or stacking faults. Similarly, the solar industry ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ec96f33616def2b815348d9c4be75e
https://doi.org/10.4028/www.scientific.net/ssp.195.297
https://doi.org/10.4028/www.scientific.net/ssp.195.297
Publikováno v:
Solid State Phenomena. 195:289-292
Although the chemical reaction is well known, the anisotropic etching of Si in alkaline solutions is a complex process. This is particularly true in the solar industry where a large mass of silicon is typically introduced into the etch bath. The etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50862bc8302055abca804b64430b8fed
https://doi.org/10.4028/www.scientific.net/ssp.195.289
https://doi.org/10.4028/www.scientific.net/ssp.195.289