Zobrazeno 1 - 10 of 30 pro vyhledávání: '"Dennis M. Hausmann"'
2
Extending growth inhibition during area-selective atomic layer deposition of Al
Autor: Wanxing, Xu, Paul C, Lemaire, Kashish, Sharma, Dennis M, Hausmann, Sumit, Agarwal
Publikováno v: Chemical communications (Cambridge, England). 58(46)
During area-selective atomic layer deposition (ALD) based on growth inhibitors, nucleation eventually occurs as the metal precursor reacts with the surface through secondary pathways. We show that ALD of Al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::1f4aa9502128d2539df09e67b19ae402
https://pubmed.ncbi.nlm.nih.gov/35593222
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3
Effect of Multilayer versus Monolayer Dodecanethiol on Selectivity and Pattern Integrity in Area-Selective Atomic Layer Deposition
Autor: Dennis M. Hausmann, Katie Lynn Nardi, Nerissa Draeger, Tzu-Ling Liu, Stacey F. Bent
Publikováno v: ACS Applied Materials & Interfaces. 12:42226-42235
Monolayer and multilayer dodecanethiols (DDT) can be assembled onto a copper surface from the vapor phase depending on the initial oxidation state of the copper. The ability of the copper-bound dodecanethiolates to block atomic layer deposition (ALD)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f48be9d0c333b598f2beddeb4756074c
https://doi.org/10.1021/acsami.0c08873
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4
Mechanism of precursor blocking by acetylacetone inhibitor molecules during area-selective atomic layer deposition of SiO2
Autor: Wilhelmus M. M. Kessels, Dennis M. Hausmann, Adriaan J. M. Mackus, Marc J. M. Merkx, Tania E. Sandoval
Publikováno v: Chemistry of Materials, 32(8), 3335-3345. American Chemical Society
Area-selective atomic layer deposition (ALD) is currently attracting significant interest as a solution to the current challenges in alignment that limit the development of sub-5 nm technology nodes in nanoelectronics. Development of area-selective A
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1449a2f781e6d41fa5374232403eebe7
https://doi.org/10.1021/acs.chemmater.9b02992
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5
Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition
Autor: Katie Lynn Nardi, Tzu-Ling Liu, Dennis M. Hausmann, Stacey F. Bent, Li Zeng
Publikováno v: Langmuir : the ACS journal of surfaces and colloids. 37(39)
To enable area-selective atomic layer deposition (AS-ALD), self-assembled monolayers (SAMs) have been used as the surface inhibitor to block a variety of ALD processes. The integrity of the SAM throughout the ALD process is critical to AS-ALD. Despit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a84390b18873952611ce84ead7a5802
https://pubmed.ncbi.nlm.nih.gov/34550696
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6
Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
Autor: K. Sharma, Thomas J. Haigh, Dennis M. Hausmann, James J. Demarest, Peethala Cornelius Brown, Paul C. Lemaire, James Chingwei Li, Arpan Mahorowala, Hosadurga Shobha, Hsiang-Jen Huang, Balasubramanian S. Pranatharthi Haran, Son V. Nguyen, P. Ramani
Publikováno v: 2021 IEEE International Interconnect Technology Conference (IITC).
AlOx was selectively deposited on top of SiCOH in 32 nm pitch Cu-SiCOH pattern to form a Fully Aligned Via (FAV) test structure. Selective deposition process performance and its integration into the 5nm BEOL FAV structure were evaluated. The selectiv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6872fbfe747685d65494c0fb36bf26c2
https://doi.org/10.1109/iitc51362.2021.9537315
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7
Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu, Co, W, and Ru
Autor: Nerissa Draeger, Dara Bobb-Semple, Stacey F. Bent, Dennis M. Hausmann, Katie Lynn Nardi
Publikováno v: Chemistry of Materials. 31:1635-1645
Area-selective atomic layer deposition (AS-ALD) is a promising “bottom-up” alternative to current nanopatterning techniques. Self-assembled monolayers (SAM) have been successfully employed as deact...
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1985c9dffa659f90842f9e1fe0b6d5e6
https://doi.org/10.1021/acs.chemmater.8b04926
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8
Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2
Autor: Marc J. M. Merkx, Rick G. J. Jongen, A. Mameli, Wilhelmus M. M. Kessels, Paul C. Lemaire, Dennis M. Hausmann, K. Sharma, Adriaan J. M. Mackus
Publikováno v: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 39(1):012402. AVS Science and Technology Society
As the semiconductor industry progresses toward more complex multilayered devices with ever smaller features, accurately aligning these layers with respect to each other has become a bottleneck in the advancement to smaller transistor nodes. To avoid
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9ae3942a81d1da25c06d21178c3af54
https://research.tue.nl/nl/publications/3f414074-7ce4-4c7c-8474-1937bf05d7a9
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10
Gas Phase Organic Functionalization of SiO2 with Propanoyl Chloride
Autor: Ryan J. Gasvoda, Scott Wang, Sumit Agarwal, Eric Hudson, Dennis M. Hausmann
Publikováno v: Langmuir. 34:14489-14497
The reaction mechanism of propanoyl chloride (C2H5COCl) with −SiOH-terminated SiO2 films was studied using in situ surface infrared spectroscopy. We show that this surface functionalization reaction is temperature dependent. At 230 °C, C2H5COCl re
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f09ba6deed5e6f02315b3587ad8481c1
https://doi.org/10.1021/acs.langmuir.8b02449
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