Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Dennis C Defevere"'
Publikováno v:
Proceedings of the IEEE. 85:1752-1764
First commercially introduced in 1990, AlGaInP light emitting diodes (LEDs) currently are the highest (luminous) efficiency visible solid-state emitters produced to date in the red through yellow spectral regime. The attainment of this high-efficienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52d166bc9d05ef7492164334e9ea48c3
https://doi.org/10.1109/5.649654
https://doi.org/10.1109/5.649654
Autor:
M. G. Craford, S. L. Rudaz, Dennis C Defevere, Wayne L. Snyder, Frank M. Steranka, D. K. McElfresh, Lou W. Cook, Michael D. Camras
Publikováno v:
Journal of Electronic Materials. 24:1407-1412
Electroluminescent decay and internal quantum efficiency measurements are made as a function of temperature on two double heterostructure AIGaAs light emitting diodes (LEDs) that emit in the visible (red) portion of the spectrum. The electroluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3257dfc74402e62fb01bb34e8f2c2af0
https://doi.org/10.1007/bf02655456
https://doi.org/10.1007/bf02655456
Publikováno v:
52nd Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cddfc2af266b133c45cc6502754be6b6
https://doi.org/10.1109/drc.1994.1009461
https://doi.org/10.1109/drc.1994.1009461
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9639e66e336900454eb180d64ade6c1e
https://doi.org/10.1109/leosst.1994.700527
https://doi.org/10.1109/leosst.1994.700527
Autor:
F. A. Kish, I.-H. Tan, Dennis C Defevere, Gloria E Hofler, Frank M. Steranka, D. A. Vanderwater, Michael D. Camras
Publikováno v:
Applied Physics Letters. 69:803-805
The feasibility of wafer bonding 50‐nm diameter wafers consisting of GaP‐AlGaInP light‐emitting diode epitaxial films to GaP substrates is demonstrated. Wafer bonding over the entire wafer area is achieved while maintaining optical transparency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3524d64645b14a4be7bcaddad796521
https://doi.org/10.1063/1.117897
https://doi.org/10.1063/1.117897
Autor:
Dennis C Defevere, Robert M Fletcher, M. G. Craford, Dan A. Steigerwald, J. G. Yu, T. D. Osentowski, M. J. Peanasky, C. P. Kuo, K. G. Park, D. A. Vanderwater, Virginia M. Robbins, F. A. Kish, Frank M. Steranka
Publikováno v:
Applied Physics Letters. 64:2839-2841
Data are presented demonstrating the operation of transparent‐substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560–630 nm) sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1992ff2e8ec8a9a5f40f35ef4d80a7c7
https://doi.org/10.1063/1.111442
https://doi.org/10.1063/1.111442
Autor:
G.E. Hofler, Frank M. Steranka, Serge L Rudaz, A. J. Moll, S. A. Stockman, M. J. Ludowise, Jingxi Yu, J. Tarn, Steven A. Maranowski, Tim Osentowski, Lou W. Cook, Virginia M. Robbins, Dennis C Defevere, C. P. Kuo, Changhua Chen, M. G. Craford, M. J. Peanasky, Dan A. Steigerwald, Robert M Fletcher, K. G. Park, I. H. Tan, Frederick A. Kish, Michael D. Camras
Publikováno v:
Light-Emitting Diodes: Research, Manufacturing, and Applications.
A new class of LEDs based on the AlGaInP material system first became commercially available in the early 1990's. These devices benefit from a direct bandgap from the red to the yellow-green portion of the spectrum. The high efficiencies possible in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dc2c200b6c7ab3e563974a8dfc5941
https://doi.org/10.1117/12.271032
https://doi.org/10.1117/12.271032
Autor:
D. A. Vanderwater, G.E. Hofler, Frederick A. Kish, Frank M. Steranka, Dennis C Defevere, K. G. Park, Daniel A. Steigerwald
Publikováno v:
Electronics Letters. 32:132
Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100000 h under accelerated life test at an ambient temperature of 55/spl d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16c7f62bb496755548e4abdfaa4f2f63
https://doi.org/10.1049/el:19960098
https://doi.org/10.1049/el:19960098
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