Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Deniz E. Civay"'
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
Extreme ultraviolet lithography (EUVL) is targeted for front-up insertion at advanced technology nodes but will be evaluated for back insertion at more mature nodes. EUVL can put two or more mask levels back on one mask, depending upon what level(s)
Autor:
Deniz E. Civay, E. Laffosse
Publikováno v:
SPIE Proceedings.
Lithographic patterning limits can be a cost-barrier that delays advancement to new nodes. This paper introduces a cost-saving design method that enables a maskless via. Multi-patterning or coloring of a design is a technique that is used at advanced
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
At the 5 nm technology node there are competing strategies for patterning: high-NA EUV, double patterning 0.33 NA EUV and a combination of optical self-aligned solutions with EUV. This paper investigates the impact of pattern shift based on the selec
Publikováno v:
SPIE Proceedings.
Monte Carlo simulations are used in the semiconductor industry to evaluate variability limits in design rule generation, commonly for interaction between different layers. The variability of the geometry analyzed is determined mainly by the lithograp
Publikováno v:
SPIE Proceedings.
Lithographic CD printing variability can be easily captured with a CDU measurement, however delineating the most significant sources causing the variability is challenging. In EUV lithography, the resist, reticle, metrology methodology, and stochasti
Autor:
Hui Peng Koh, Tom Wallow, Deniz E. Civay, Peter Brooker, Harry J. Levinson, Ulrich Klostermann, Pawitter Mangat, E. Nash, Joachim Siebert
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
The transition into smaller nodes has resulted in stringent CD tolerance requirements and the role of mask LER in that budget is not sufficiently understood. The critical variables associated with mask LER were explored with the goal of establishing
Autor:
Tom Wallow, Iacopo Mochi, Sudhar Raghunathan, Eric M. Gullikson, Obert Wood, Deniz E. Civay, Vibhu Jindal, Lei Sun, Markus P. Benk, Kenneth A. Goldberg, Oleg Kritsun, Pawitter Mangat
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Both 90.9o and 180o phase shifts have been achieved using a new Phase Shift Mask (PSM) structure. This PSM is intended for use as a focus monitor. Both the EUV images of the focus monitor patterns on the new EUV PSM test mask, obtained from the SEMAT
Autor:
Tom Wallow, Deniz E. Civay, Anita Fumar-Pici, Jeffrey A. Schefske, Raymond Maas, Coen Verspaget, S. Wang, Joerg Mallman, Y. van Dommelen, Mandeep Singh, H. F. Hoefnagels, Steven G. Hansen, Gazi Tanriseven
Publikováno v:
SPIE Proceedings.
The major challenge for EUV resists at 22 nm half-pitch and below continues to be simultaneously achieving resolution, sensitivity, and line-width roughness (LWR) targets. An ongoing micro-exposure tool (MET) based evaluation of leading resists throu
Autor:
Matthew E. Colburn, Karen Petrillo, Xuelian Zhu, Scott Halle, Timothy A. Brunner, Daniel Corliss, Hirokazu Kato, Emily Gallagher, Alfred Wagner, Ralph Schlief, Tom Wallow, Lei Sun, Yunpeng Yin, John C. Arnold, Chiew-seng Koay, Chen Jim C, S. Fan, Obert Wood, Jongwook Kye, Guillaume Landie, Deniz E. Civay, Gregory McIntyre, Satoshi Nagai, Cecilia C. Smolinski, Pak Leung, Sudhar Raghunathan, Craig Higgins, Ming He, Martin Burkhardt
Publikováno v:
SPIE Proceedings.
The first use of extreme ultraviolet (EUV) lithography in logic manufacturing is targeted for the 14 nm node, with possible earlier application to 20-nm node logic device back-end layers to demonstrate the technology. Use of EUV lithography to patter
Autor:
Harry J. Levinson, Craig Higgins, Hui Peng Koh, Pawitter Mangat, Keith Standiford, Jeffrey A. Schefske, Mandeep Singh, Ralph Schlief, Thomas I. Wallow, Fan Jiang, Chris Clifford, Yi Zou, Sudhar Raghunathan, Azat Latypov, Deniz E. Civay, Lei Sun, Obert Wood, Oleg Kritsun
Publikováno v:
SPIE Proceedings.
Although the k1 factor is large for extreme ultraviolet (EUV) lithography compared to deep ultraviolet (DUV) lithography, OPC is still needed to print the intended patterns on the wafer. This is primarily because of new non-idealities, related to the