Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Denise M. Puisto"'
Autor:
Denise M. Puisto, Adam H. Fisher, William J. Dauksher, M. Laudon, D. J. Resnick, Franco Cerrina, W. A. Johnson, Kevin D. Cummings, Roxann L. Engelstad
Publikováno v:
Microelectronic Engineering. 35:549-552
In the fabrication of a typical refractory X-ray lithography mask, the pattern transfer process subjects the membrane/pattern to the non-uniform deposition and removal of multiple stressed layers. This removal process can result in unacceptably large
Publikováno v:
IBM Journal of Research and Development. 37:411-420
An electron beam lithography system suitable for manufacturing X-ray masks with critical dimensions down to 0.35 µm is described. The system features a 50-kV variable shaped spot (VSS) electron column with a variable axis immersion lens (VAIL). This
Autor:
Cameron J. Brooks, Kenneth C. Racette, Renu Whig, William J. Dauksher, Douglas E. Benoit, Kevin D. Cummings, Denise M. Puisto
Publikováno v:
SPIE Proceedings.
Silicon oxynitride removal processes are characterized for incorporation into the refractory x-ray mask fabrication sequence as the hardmask removal step. It is essential that his process not alter final image placement, one of the most critical para
Publikováno v:
SPIE Proceedings.
In this paper, dimensional control of critical features in proximity x-ray lithography is discussed. CD error components attributed to x-ray mask, proximity exposure and resist process are identified. Analysis of linewidth control data at 180 nm and
Autor:
Denise M. Puisto, Kevin D. Cummings, Douglas J. Resnick, William Chu, Janet M. Rocque, Philip A. Seese
Publikováno v:
SPIE Proceedings.
A resist process using Shipley SNR200R chemically amplified (CA) resist has been characterized and optimized for the manufacture of 1x masks for x-ray lithography. This paper describes the processes and the experimental designs used to optimize the p
Autor:
Kurt R. Kimmel, Janet M. Rocque, Denise M. Puisto, Douglas E. Benoit, Mark Lawliss, Thomas B. Faure
Publikováno v:
SPIE Proceedings.
A continuing trend in X-ray lithography is the requirement for high accuracy masks. Image placement, or the ability to pattern images in the correct locations, is one of the most critical requirements. It is driven by a number of parameters, includin
Autor:
Steven C. Nash, F. Volkringer, Richard French, George J. Collini, Robert H. Fair, Phil Sa, Ben R. Vampatella, Ronald A. DellaGuardia, Chet Wasik, George G. Gifford, V. Nastasi, John Michael Warlaumont, Lars W. Liebmann, David E. Seeger, Denise M. Puisto, Angela C. Lamberti, Thomas Zell, Janet M. Rocque
Publikováno v:
SPIE Proceedings.
This paper describes results achieved from the fabrication of 64Mb DRAM chips using x-ray lithography for the gate level. Three lots were split at the gate level for exposure with either Micrascan 92 at IBM's Advanced Semiconductor Technology Center
Autor:
Mark Lawliss, Denise M. Puisto
Publikováno v:
SPIE Proceedings.
An in-depth study of image-placement distortion contributors has been completed using the IBM EL-3+ electron-beam lithography system for fabricating x-ray masks. The EL- 3+ is an IBM-designed system which has been described in previous papers. System
Publikováno v:
SPIE Proceedings.
We are reporting on a chemically amplified negative-tone resist developed at IBM. The resist consists of three components: novolac resin, photoacid generator, and crosslinker. The resist is sensitive to DUV, e-beam, and x ray. However, this paper foc
Autor:
Denise M. Puisto
Publikováno v:
SPIE Proceedings.
The use of electron-beam lithography for x-ray mask making requires an advanced system optimized for geometries of 0.25 micrometers and below. IBM's advanced mask facility in Essex Junction, Vermont, uses a variable-shaped-spot electron-beam lithogra