Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Denise, Calì"'
Autor:
Fabrizio Roccaforte, Paolo Badalà, B. Carbone, Roberto Modica, Corrado Bongiorno, Antonella Sciuto, Salvatore Marchese, Salvatore Coffa, Denise Calì, Alfio Russo, Massimo Mazzillo, Francesco Patane
Publikováno v:
Materials Science Forum. 858:1015-1018
Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ed6bbb8c13e2b2b6e5f146545ff6331
https://doi.org/10.4028/www.scientific.net/msf.858.1015
https://doi.org/10.4028/www.scientific.net/msf.858.1015
Autor:
Annalisa Amico, Maxine Anastasi, Lucia Arcifa, Fabiola Ardizzone, Maria Bellavia, Oscar Belvedere, Rosa Maria Bonacasa Carra, Carmela Bonanno, Michel Bonifay, Luciana Borrello, Aurelio Burgio, Giuseppe Cacciaguerra, Denise Calì, Valentina Caminneci, Claudio Capelli, Madeleine Cavalier, Giuseppina Cipriano, Claudia Cirelli, Marina Congiu, Fausto D'Angelo, Armida De Miro, Giovanni Di Stefano, Antonino Facella, Giuseppe Falzone, Giovanni Fragalà, Carmela Franco, Vanessa Gagliardi, Eleonora Gasparini, Angela Maria Grasso, Lorenzo Guzzardi, Céline Huguet, Roberto La Rocca, Rosa Lanteri, Victoria Leitch, Anna Lucia Lionetti, Daniele Malfitana, Laura Maniscalco, Antonino Mazzaglia, Tomoo Mukai, Francesca Oliveri, Nunzia Ollà, Claudia Pantellaro, Rosalba Panvini Sara Paparoni, Maria Concetta Parello, Andrea Patanè, Patrizio Pensabene, Marianna Perna, Filippo Pisciotta, Antonella Polito, Paola Puppo, Annalisa Rivoli, Maria Serena Rizzo, Annamaria Sammito, Giulio Scarponi, Saverio Scerra, Maria Luisa Scrofani, Lavinia Sole, Antonina Testa, Gabriella Tigano, Philippe Tisseyre, Maria Adelaide Vaggioli, Francesca Valbruzzi, Matteo Valentino, Stefano Vassallo, Emma Vitale, Luca Zambito, Donata Zirone
Publikováno v:
info:cnr-pdr/source/autori:Annalisa Amico; Maxine Anastasi; Lucia Arcifa; Fabiola Ardizzone; Maria Bellavia; Oscar Belvedere; Rosa Maria Bonacasa Carra; Carmela Bonanno; Michel Bonifay; Luciana Borrello; Aurelio Burgio; Giuseppe Cacciaguerra; Denise Calì; Valentina Caminneci; Claudio Capelli; Madeleine Cavalier; Giuseppina Cipriano; Claudia Cirelli; Marina Congiu; Fausto D'Angelo; Armida De Miro; Giovanni Di Stefano; Antonino Facella; Giuseppe Falzone; Giovanni Fragalà; Carmela Franco; Vanessa Gagliardi; Eleonora Gasparini; Angela Maria Grasso; Lorenzo Guzzardi; Céline Huguet; Roberto La Rocca; Rosa Lanteri; Victoria Leitch; Anna Lucia Lionetti; Daniele Malfitana; Laura Maniscalco; Antonino Mazzaglia; Tomoo Mukai; Francesca Oliveri; Nunzia Ollà; Claudia Pantellaro; Rosalba Panvini Sara Paparoni; Maria Concetta Parello; Andrea Patanè; Patrizio Pensabene; Marianna Perna; Filippo Pisciotta; Antonella Polito; Paola Puppo; Annalisa Rivoli; Maria Serena Rizzo; Annamaria Sammito; Giulio Scarponi; Saverio Scerra; Maria Luisa Scrofani; Lavinia Sole; Antonina Testa; Gabriella Tigano; Philippe Tisseyre; Maria Adelaide Vaggioli; Francesca Valbruzzi; Matteo Valentino; Stefano Vassallo; Emma Vitale; Luca Zambito; Donata Zirone/titolo:La ceramica africana nella Sicilia Romana %2F La ceramique africaine dans la Sicile romaine./editore:/anno:2016
Grazie alla sua posizione centrale nel Mediterraneo, la Sicilia si configura con un vero banco di prova per lo studio delle reti commerciali che hanno portato alla divisione universale, in tutto il mondo antico, della ceramica dell'Africa romana. Il
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::1746e7c755f873d27654541badea9be1
http://www.cnr.it/prodotto/i/368998
http://www.cnr.it/prodotto/i/368998
Publikováno v:
Microelectronics Reliability. 47:798-801
A detailed study of the carrier trapping properties shown by the silicon/oxynitride/oxide gate layers in PowerVDMOS technologies is reported. A quantitative analysis of hole and electron trap densities versus the specific N 2 O based nitridation proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c11634a621c5ee4db50cbfb3c5580e0
https://doi.org/10.1016/j.microrel.2007.01.015
https://doi.org/10.1016/j.microrel.2007.01.015
A detailed study of the interface state properties shown by the silicon/oxynitride/oxide gate layers used in Vertically Diffused PowerMOSFET (PowerVDMOS) technologies is reported. A quantitative analysis of interface states versus the specific N 2 O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cd523aa72d1334916a0d7e4cf5ebbd9
http://hdl.handle.net/11570/1707739
http://hdl.handle.net/11570/1707739
The identification of the bonding environments and their progressive modifications upon reaching the oxynitride/silicon interface, in a SiO 2 /SiO x N y /Si structure, have been investigated by means of X-ray photoemission spectroscopy (XPS). The SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f73133aadd859091b2bdd01fd9f560b
http://hdl.handle.net/11570/1717029
http://hdl.handle.net/11570/1717029
Autor:
Fortunato Neri, Giuseppe Currò, F. Bonsignore, F. Monforte, M. Camalleri, Denise Calì, Enza Fazio
Publikováno v:
Journal of The Electrochemical Society. 155:G134
The structural properties of silicon oxynitride films used at the gate dielectrics interface in Power vertically diffused metal oxide semiconductor technologies have been studied by means of X-ray photoelectron spectroscopy. An overall picture of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a8e83191605ee2eebf3f79d0d1911e7
https://doi.org/10.1149/1.2903862
https://doi.org/10.1149/1.2903862
Autor:
F. Monforte, Denise Calì, M. Camalleri, F. Bonsignore, Giuseppe Currò, Enza Fazio, Fortunato Neri
Publikováno v:
Journal of The Electrochemical Society. 155:G1
bSTMicroelectronics, 95121 Catania, Italy The structural properties of silicon oxynitride films grown in a N2O environment at temperatures higher than 900°C and for use as gate dielectrics in vertically diffused power metal oxide semiconductor field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb200ab2ff29e843658a93ae6a68b4d
https://doi.org/10.1149/1.2799732
https://doi.org/10.1149/1.2799732