Zobrazeno 1 - 10 of 96 pro vyhledávání: '"Denis Shamiryan"'
1
Automated approach to the analysis of geometric parameters of MEMS elements
Autor: Nikita Izrailev, Artem Kazachkov, Alexey Isachenko, Denis Shamiryan, Irina Rod
Publikováno v: International Conference on Micro- and Nano-Electronics 2018.
Modern high-tech MEMS manufacturing is not able to function without developed system of quality monitoring. Wellmanaged quality monitoring system enables to predict production risks and minimize them effectively. We devoted our research to such quali
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bd92b779c4c7871a7caaa17f0604d93d
https://doi.org/10.1117/12.2521986
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2
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Autor: Johan Wouters, Stefan Kubicek, D. L. Diehl, Malgorzata Jurczak, Katia Devriendt, Rita Rooyackers, Virginie Gravey, T. Y. Hoffmann, Naoto Horiguchi, Denis Shamiryan, T. Vandeweyer, A. Cockburn, Erik Sleeckx, Augusto Redolfi, M. Togo, Tinne Delande, Min-Soo Kim
Publikováno v: Solid-State Electronics. 71:106-112
This work presents a process to fabricate Bulk FinFETs with advancements in critical fabrication steps such as the shallow trench oxide recess and the adjustment of the fin height. These steps are accomplished with the adoption of Siconi™ Selective
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69991887c91fcfb3f4b8f6711f09844d
https://doi.org/10.1016/j.sse.2011.10.029
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3
The Importance of Cavitation Hysteresis in Megasonic Cleaning
Autor: Denis Shamiryan, Marc Heyns, Paul Mertens, Marc Hauptmann, Steven Brems, Elisabeth Camerotto, Stefan De Gendt
Publikováno v: Solid State Phenomena. 187:171-175
An improved fundamental understanding of the megasonic cleaning process is necessary to optimize cleaning efficiency and minimize the unwanted damage to fragile structures. Argon sonoluminescence (SL) measurements are done to achieve an improved insi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48e406afdc0393d117de6e2853082276
https://doi.org/10.4028/www.scientific.net/ssp.187.171
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4
Influence of Photoresist and BARC Selection on the Efficiency of a Post-Etch Wet Strip in BEOL Applications
Autor: Guy Vereecke, Jonas Baeyens, Christina Baerts, Herbert Struyf, Marcel Lux, Els Kesters, Denis Shamiryan, Joris Pittevils
Publikováno v: Solid State Phenomena. 187:219-222
All-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom AntiReflective Coating (BARC) in the back-end-of-line (BEOL) semiconductor manufacturing, as plasma ash, traditionally used to remove the PR and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50cfc9ef08f6cfee98535eb80afa16ef
https://doi.org/10.4028/www.scientific.net/ssp.187.219
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6
Integrated diffusion–recombination model for describing the logarithmic time dependence of plasma damage in porous low-k materials
Autor: Gerard T. Barkema, Herbert Struyf, Denis Shamiryan, Adam Urbanowicz, Mikhail R. Baklanov, Christian Maes, Eddy Kunnen
Publikováno v: Microelectronic Engineering. 88:631-634
This work proposes an extended model that describes the propagation of damage in porous low-k material exposed to a plasma. Recent work has indicated that recombination and diffusion play a more dominant role than VUV light [1-5] in oxygen plasma ind
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90d35a834260f56aeff8e5b63c63ee71
https://doi.org/10.1016/j.mee.2010.07.014
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7
Simultaneous Etching and Deposition Processes during the Etching of Silicon with a Cl2/O2/Ar Inductively Coupled Plasma
Autor: Denis Shamiryan, Annemie Bogaerts, Stefan Tinck
Publikováno v: Plasma processes and polymers
In this article, surface processes occurring during the etching of Si with a Cl2/O2/Ar plasma are investigated by means of experiments and modeling. Cl2-based plasmas are commonly used to etch silicon, while a small fraction of O2 is added to protect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39f2987660252eb97e0267075b0e271b
https://doi.org/10.1002/ppap.201000189
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8
Selective Removal of High-k Dielectrics
Autor: Denis Shamiryan, Vasile Paraschiv
Publikováno v: ECS Transactions. 34:311-318
Continuous downscaling of integrated circuits brought an end to the era of SiO2. In gate dielectrics, it is being replaced by materials with high dielectric constant, so-called high-k dielectrics. One of the challenges in the integration of the high-
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12d236f47136ed11dea298878c60fd31
https://doi.org/10.1149/1.3567596
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10
Influence of the Top Chamber Window Temperature on the STI Etch Process
Autor: Werner Boullart, Michael Klick, Stefan Tinck, Denis Shamiryan, Mikhail Baklanov, Evgeny Danilkin, Alexey Milenin
Publikováno v: ECS Transactions. 27:731-736
During shallow trench isolation etching it was found that etch stop appears at the center of a 300 mm wafer as the temperature of the top quartz window of the etch chamber exceeds 85°C. We attributed the etch stop to redeposition of some low-volatil
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4f62a0f0cd4fd2bae73c6b916263221
https://doi.org/10.1149/1.3360702
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