Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Denis P. Masson"'
Autor:
Simon Fafard, Denis P. Masson
Publikováno v:
Photonics, Vol 9, Iss 8, p 579 (2022)
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5
Externí odkaz:
https://doaj.org/article/becf6f17035048259b534c27ef2bbbe6
Autor:
Simon Fafard, Denis P. Masson
Publikováno v:
Photonics, Vol 9, Iss 7, p 438 (2022)
The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here,
Externí odkaz:
https://doaj.org/article/90f198656082498e9d1c4911b200e000
Publikováno v:
Science. 276:1681-1684
When ICl adsorbs on a clean silicon (111)-(7×7) surface, the reaction is chemically selective. This process has been studied with the use of scanning tunneling microscopy and Auger spectroscopy. The dominant mechanism is the formation of silicon mon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e40fbe791a436fd753149433ad1fb775
https://doi.org/10.1126/science.276.5319.1681
https://doi.org/10.1126/science.276.5319.1681
Publikováno v:
The Journal of Chemical Physics. 103:7585-7591
The dissociative 193 nm photochemistry of both multilayer and submonolayer NH3 on Pt(111) has been studied. Upon irradiation with 193 nm light, the submonolayer covered Pt surface yields only a small amount of NH3 desorption. In contrast, the desorpt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57ca0e2180766afbe5f5842dce5f970b
https://doi.org/10.1063/1.470276
https://doi.org/10.1063/1.470276
Publikováno v:
Journal of Non-Crystalline Solids. 190:151-156
X-ray photoemission spectroscopy (XPS) has been used to study the structural changes of device-quality a-Si:H between the annealed state (A) and the light-soaked state (B). The XPS spectra show a reversible shift of about 0.1 eV of the Si 2p peak to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::166488e092cdbcf8aa80fc1ff8b8a687
https://doi.org/10.1016/0022-3093(95)00268-5
https://doi.org/10.1016/0022-3093(95)00268-5
Publikováno v:
The Journal of Chemical Physics. 102:9096-9108
Polarized ultraviolet light from an excimer laser (193 nm) was used to photodesorb and photodissociate N2O adsorbed on a cold (80 K) Pt(111) surface. The photodesorbed species and their time of flight (TOF) were monitored by resonantly enhanced multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::062e567e74925fb77975ec99fd87841f
https://doi.org/10.1063/1.468858
https://doi.org/10.1063/1.468858
Autor:
Thomas F. Hanisco, Andrew C. Kummel, Chun Yan, Denis P. Masson, William L. Nichols, John C. Tully
Publikováno v:
The Journal of Chemical Physics. 101:3341-3352
The scattering of rotationally cold N2 from Ag(111) results in angular momentum alignment and orientation of the scattered molecules; measurement of the angular momentum polarization as a function of exit angle, final J state, and exit translation en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::887c250a452cea63fff469195b5a4234
https://doi.org/10.1063/1.467582
https://doi.org/10.1063/1.467582
Publikováno v:
Applications of Photonic Technology 6.
A thin layer of INGaAs is the critical photo-absorbing layer in epitaxially grown layers used in the monolithic integration of active photodetectors and a passive mux/demux. This thin InGaAs active layer requires tight thickness control that is beyon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::043c56c18987b391f462b7978aad5939
https://doi.org/10.1117/12.543725
https://doi.org/10.1117/12.543725
Publikováno v:
MRS Proceedings. 557
X-ray irradiation-induced structural changes in undoped a-Si:H have been investigated in detail by X-ray photoemission spectroscopy (XPS). The Si2s and the Si2p peaks were found to shift simultaneously to lower bonding energies, by the same amount, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3e7dc8ff1d382c59a261baeb21019f
https://doi.org/10.1557/proc-557-359
https://doi.org/10.1557/proc-557-359
Publikováno v:
SPIE Proceedings.
Polarized ultraviolet light from an excimer laser (193 nm) was used to photodesorb and photodissociate N2O and NH3 adsorbed on a cold Pt(111) surface. The photodesorbed species and their time-of-flight (TOF) were monitored by Resonantly Enhanced Mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e10f90158c03985076b02864fbb216
https://doi.org/10.1117/12.221477
https://doi.org/10.1117/12.221477