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pro vyhledávání: '"Denis O. Naumenko"'
Autor:
I. Simkiene, N. L. Dmitruk, Valentinas Snitka, Igor Dmitruk, Natalia Berezovska, Denis O. Naumenko
Publikováno v:
MRS Proceedings. 1534:A99-A104
Properties of the electrochemically prepared porous III-V semiconductors, GaAs and InP, have been studied using scanning electron microscopy (SEM), atomic force microscopy (AFM), monochromatic multi-angle-of-incidence (MAI) ellipsometry, Raman scatte