Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Denis Marcon"'
Autor:
Shan Yin, Yiming Lin, Ronghui Hao, Shoudong Jin, Chuan He, Weigang Yao, Xingjun Li, Qingyuan He, Xiaoqing Pu, Xiaoliang Su, Yanbo Zou, Hui Cai, Kye-Jin Lee, Mike Wang, Harry Guo, Ke Shen, Felix Wang, H.-C. Chiu, Larry Chen, Denis Marcon, Roy K.-Y. Wong
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Autor:
Aleksandrs Marinins, Cedric Rolin, Philippe Soussan, Haris Osman, Véronique Rochus, B. Figeys, D. S. Tezcan, Xavier Rottenberg, Denis Marcon, Bart Vereecke, Eleonora Storace, Jan Genoe, Kristof Lodewijks, Anabel De Proft, Roelof Jansen, Robert Gehlhaar, Paul Heremans, P. Helin, Sandeep S. Saseendran, Nga P. Pham
Publikováno v:
Optical Architectures for Displays and Sensing in Augmented, Virtual, and Mixed Reality (AR, VR, MR) II.
The coming of age of AR, VR and MR applications and usage scenarios relies on the development of ever-improved advanced light management systems, both for sensing (camera) and actuation (display), e.g., solid-state dToF or FMCW scanning or flash LiDA
Autor:
B. De Jaeger, Guido Groeseneken, Thibault Cosnier, Shuzhen You, Denis Marcon, Karen Geens, Dirk Wellekens, Robert Langer, Nooshin Amirifar, Ming Zhao, W. Guo, Benoit Bakeroot, Hu Liang, Stefaan Decoutere, Steve Stoffels, B. Vanhove, Xiangdong Li, Niels Posthuma
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components includin
Autor:
Stefaan Decoutere, Steve Stoffels, Benoit Bakeroot, Hu Liang, Shuzhen You, Nicolo Ronchi, Tian-Li Wu, Niels Posthuma, Denis Marcon
Publikováno v:
IEEE Electron Device Letters. 38:1696-1699
In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we have observed that the ${C}$ – ${V}$ behavior depends on the different processing condition
Autor:
Enrico Sangiorgi, Andrea Natale Tallarico, Jie Hu, Steve Stoffels, Denis Marcon, Paolo Magnone, Silvia Lenci, Stefaan Decoutere, Claudio Fiegna
Publikováno v:
IEEE Transactions on Electron Devices. 63:3479-3486
In this paper, we present the results of a combined measurement/simulation analysis of the degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky barrier diodes (SBDs). Turn-on voltage ( $V_{\mathrm{ TON}}$ ) and on-re
Autor:
Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, Brice De Jaeger, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Jacopo Franco
Publikováno v:
IEEE Transactions on Electron Devices. 63:1853-1860
© 1963-2012 IEEE. In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, i.e., plasma-enhanced atomic layer deposition (PEALD) SiN and ALD Al2O3 gate dielectric, are used to study the origin of positive bias temperature
Autor:
Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Gaudenzio Meneghesso, Denis Marcon, Tian-Li Wu, Enrico Zanoni, Marleen Van Hove, Stefaan Decoutere, Steve Stoffels
Publikováno v:
IEEE Electron Device Letters. 37:474-477
This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator–semiconductor high electron mobility transistors with partially recessed AlGaN. Based on a set of stress/recovery experiments carried o
Autor:
Denis Marcon, Enrico Zanoni, Tian-Li Wu, Davide Bisi, Matteo Meneghini, Marleen Van Hove, Stefaan Decoutere, Steve Stoffels, Gaudenzio Meneghesso, Isabella Rossetto
Publikováno v:
Microelectronics Reliability. 58:151-157
This paper reports an extensive analysis of the trapping and reliability issues in AlGaN/GaN metal insulator semiconductor (MIS) high electron mobility transistors (HEMTs). The study was carried out on three sets of devices with different gate insula
Autor:
Paul R. Chalker, Ruiyang Yu, Marleen Van Hove, Geoff Haynes, Enrico Zanoni, Jie Hu, Xu Li, Hiroshi Amano, Daniel Piedra, Hiroji Kawai, Min Sun, Martin Kuball, Qingyun Huang, L. Di Cioccio, Carlo De Santi, Rongming Chu, Matthew Charles, Yuhao Zhang, Rekha Reddy, Erwan Morvan, Joseph J. Freedsman, Akira Nakajima, Tomas Palacios, Thomas Heckel, Denis Marcon, Shu Yang, Stephen Oliver, A. Torres, Oliver Häberlen, Stefan Zeltner, Dan Kinzer, Marc Plissonnier, Vineet Unni, Iain G. Thayne, Gaudenzio Meneghesso, Patrick Fay, David J. Wallis, Mengyuan Hua, Chris Youtsey, Shuichi Yagi, Sheng Jiang, Alex Q. Huang, Louis J. Guido, Matteo Meneghini, Ashwani Kumar, Jingshan Wang, Dilini Hemakumara, Nicola Trivellin, Martin Marz, Jinqiao Xie, Nadim Chowdhury, Maria Merlyne De Souza, T Bouchet, Michael J. Uren, Bernd Eckardt, Ekkanath Madathil Sankara Narayanan, Peter A. Houston, K. B. Lee, Matteo Borga, Yannick Baines, Takashi Egawa, Robert McCarthy, Stefaan Decoutere, Kevin J. Chen
Publikováno v:
Journal of Physics D: Applied Physics
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At
Autor:
Stefaan Decoutere, Steve Stoffels, Niels Posthuma, Claudio Fiegna, Enrico Sangiorgi, Denis Marcon, Andrea Natale Tallarico, Paolo Magnone
In this paper, we present an experimental analysis of the degradation induced by positive bias temperature instability stress in GaN-based power high electron mobility transistors with p-type gate, controlled by a Schottky metal/p-GaN junction. In pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eec6acbc402437655f206ce53eee939d
http://hdl.handle.net/11577/3258321
http://hdl.handle.net/11577/3258321