Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Denis Antonov"'
Autor:
Felipe Fávaro de Oliveira, Denis Antonov, Ya Wang, Philipp Neumann, Seyed Ali Momenzadeh, Timo Häußermann, Alberto Pasquarelli, Andrej Denisenko, Jörg Wrachtrup
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Ion implantation is used to introduce spin defects in solids, but it inflicts residual lattice damage, degrading performances. Here the authors demonstrate that the charge state of induced defects influences such damage, and that charging vacancies l
Externí odkaz:
https://doaj.org/article/e77c52d22d8c48a2a6171f1c3cb68218
Publikováno v:
Physical Review B. 104
We present a computational approach, based on density functional theory and screened configuration interaction, able to accurately treat highly correlated electron spins localized around semiconductor defects, typically occurring in the context of qu
Autor:
Jörg Wrachtrup, Helmut Fedder, Felipe Fávaro de Oliveira, Denis Antonov, Andrej Denisenko, Seyed Ali Momenzadeh
Publikováno v:
physica status solidi (a). 213:2044-2050
The efficiency of co-implantation of different ion species to generate near-surface nitrogen-vacancy (NV) centers in diamond is analyzed by comparing the areal densities of NV centers corresponding to various experimental conditions. In particular, t
Publikováno v:
Physical Review B. 95
Autor:
Andrej Denisenko, Tokuyuki Teraji, Gergő Thiering, Felipe Fávaro de Oliveira, Matthias Pfender, Philipp Neumann, Alejandro Gallo, Andreas Grüneis, Marcus W. Doherty, Jose A. Garrido, Junichi Isoya, Audrius Alkauskas, Sina Burk, Helmut Fedder, Jan Meijer, Adam Gali, Jörg Wrachtrup, Patrick Simon, Denis Antonov, Nabeel Aslam
Publikováno v:
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Universitat Autònoma de Barcelona
In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::634742de2e2bc3452c8212f7caf24174
https://ddd.uab.cat/record/239271
https://ddd.uab.cat/record/239271
Publikováno v:
Physical Review B. 94
We present a method to extract accurate pseudopotentials for surface passivants, within the framework of the atomic effective pseudopotential method. We retain the imaginary part of the pseudopotential in the construction procedure. This imaginary co
Autor:
Denis Antonov, Felipe Fávaro de Oliveira, Andrej Denisenko, Fedor Jelezko, Christian Osterkamp, S. Ali Momenzadeh, Jochen Scharpf, Boris Naydenov, J. Wrachtrup
The negatively-charged nitrogen-vacancy (NV) center in diamond has been shown recently as an excellent sensor for external spins. Nevertheless, their optimum engineering in the near-surface region still requires quantitative knowledge in regard to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a1036c00236c9754cd53aa1fe7ac985
http://arxiv.org/abs/1602.09096
http://arxiv.org/abs/1602.09096
Autor:
Sang-Yun Lee, Márton Vörös, Torsten Rendler, Johannes Biskupek, A. V. Fisenko, Igor I. Vlasov, Adam Gali, Steffen Steinert, Ilmo Sildos, Philip R. Hemmer, L. F. Semjonova, Denis Antonov, Oleg I. Lebedev, Jörg Wrachtrup, Ute Kaiser, Andrey A. Shiryaev, Vitaly I. Konov, Fedor Jelezko
Publikováno v:
Nature nanotechnology. 9(1)
Doping of carbon nanoparticles with impurity atoms is central to their application. However, doping has proven elusive for very small carbon nanoparticles because of their limited availability and a lack of fundamental understanding of impurity stabi
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