Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Denis Tsvetkov"'
Autor:
Denis Tsvetkov
Publikováno v:
Journal of Advances in Applied & Computational Mathematics. 8:87-97
We study the problem of small motions of an ideal stratified liquid with a free surface totally covered by an elastic ice. The elastic ice is modeled by an elastic plate. We reduce the original initial boundary value problem to an equivalent Cauchy p
Publikováno v:
Wide Bandgap Semiconductors for Power Electronics. :75-92
Autor:
Denis Tsvetkov
Publikováno v:
Clinical nutrition and metabolism. 2:125-140
Cancer is currently one of the leading causes of death. Mortality in this group of patients is due to both underlying disease course and therapy complications. The development of cachexia is one of the most important factors that affect both the qual
Publikováno v:
Communications in Computer and Information Science ISBN: 9783031149849
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a916c794d8328bb885310cd87ba165e3
https://doi.org/10.1007/978-3-031-14985-6_4
https://doi.org/10.1007/978-3-031-14985-6_4
Publikováno v:
Materials Science Forum. 858:167-172
Initial results from a custom, 3x150 mm horizontal hot-wall, SiC Vapor-Phase epitaxial growth reactor (VPE), with full planetary motion are reported. Epitaxial layer properties are compared with those grown on previously reported 1x150 mm hot-wall an
Autor:
Albert A. Burk, Adrian Powell, Michael J. O'Loughlin, Scott Ustin, Denis Tsvetkov, Jeff Seaman, N. Partin, Lara Garrett
Publikováno v:
Materials Science Forum. :113-116
Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce th
Autor:
Yuri I. Khlebnikov, Albert A. Burk, John W. Palmour, Dan Barnhardt, Paul Towner, Michael J. O'Loughlin, Eugene Deyneka, Denis Tsvetkov, Lara Garrett, Jeff Seaman
Publikováno v:
Materials Science Forum. :75-80
Initial results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased areal throughput offered by this reactor and 150-mm diameter wafers, is intended to re
Autor:
Xueping Xu, Edward A. Preble, Mike Tutor, Mark N. Williams, Denis Tsvetkov, Drew Hanser, Lianghong Liu
Publikováno v:
Journal of Crystal Growth. 305:372-376
Large gallium nitride (GaN) crystals were grown using a hydride vapor phase epitaxy (HVPE) technique and were processed into substrates for device applications. Polishing procedures were developed for GaN substrates to produce surfaces prepared for e
Autor:
Aric Sanders, Paul Blanchard, Kris Bertness, Matthew Brubaker, Christopher Dodson, Todd Harvey, Andrew Herrero, Devin Rourke, John Schlager, Norman Sanford, Ann N Chiaramonti, Albert Davydov, Abhishek Motayed, Denis Tsvetkov
Publikováno v:
Nanotechnology; Nov2011, Vol. 22 Issue 46, p465703-465703, 1p