Zobrazeno 1 - 10
of 120
pro vyhledávání: '"Dengkui, Wang"'
Publikováno v:
Journal of Magnesium and Alloys, Vol 12, Iss 5, Pp 1918-1930 (2024)
This paper provided an effective method to further improve the mechanical properties of the AZ80+0.4%Ce magnesium alloy wheel spoke. The effect of high strength and ductility was obtained with a yield strength of 295.36 MPa, an elongation of 10%, by
Externí odkaz:
https://doaj.org/article/5f3fd196ac0d4d2cb08017ca51a458e4
Autor:
Fenyong Yao, Shisheng Huang, Jiahui Liu, Chunhua Tan, Mengqi Xu, Dengkui Wang, Maoqing Huang, Yiyao Zhu, Xingxu Huang, Shuijin He
Publikováno v:
Cell Death and Disease, Vol 14, Iss 8, Pp 1-13 (2023)
Abstract Haploinsufficient mutation in arginine and glutamine-rich protein 1 (Arglu1), a newly identified pre-mRNA splicing regulator, may be linked to neural developmental disorders associated with mental retardation and epilepsy in human patients,
Externí odkaz:
https://doaj.org/article/10b73a0f4b2f491db0734fbe9c79ff08
Publikováno v:
Crystals, Vol 13, Iss 9, p 1325 (2023)
Strain engineering is an effective way to adjust the sensing properties of two-dimensional materials. In this paper, lateral heterojunctions (LHSs) based on arsenic and antimony have been designed along the armchair (AC) or zigzag (ZZ) edges. The ads
Externí odkaz:
https://doaj.org/article/93d3f8d8271c401b9780aa6c75f14efe
Publikováno v:
Frontiers in Chemistry, Vol 10 (2022)
The band gap of lateral heterojunctions (LHSs) can be continuously tuned by changing the widths of their components. In this work, Sb/Bi LHSs based on monolayer Sb and Bi atoms with armchair and zigzag interfaces are constructed, respectively. It exh
Externí odkaz:
https://doaj.org/article/402043933b1a40b7a7ed33fb2e8e3407
Autor:
Dengkui Wang, Xian Gao, Jilong Tang, Xuan Fang, Dan Fang, Xinwei Wang, Fengyuan Lin, Xiaohua Wang, Rui Chen, Zhipeng Wei
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by te
Externí odkaz:
https://doaj.org/article/491943fc27bc4b96ba5c7795a09df482
Autor:
Haolin Li, Jilong Tang, Fengyuan Lin, Dengkui Wang, Dan Fang, Xuan Fang, Weizhen Liu, Rui Chen, Zhipeng Wei
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed s
Externí odkaz:
https://doaj.org/article/43c968934131458f8cc067a68e967b5f
Autor:
Bobo Li, Feng Tian, Xiangqian Cui, Boyuan Xiang, Hongbin Zhao, Haixi Zhang, Dengkui Wang, Jinhua Li, Xiaohua Wang, Xuan Fang, Mingxia Qiu, Dongbo Wang
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1773 (2022)
In recent years, rare-earth metals with triply oxidized state, lanthanide ions (Ln3+), have been demonstrated as dopants, which can efficiently improve the optical and electronic properties of metal halide perovskite materials. On the one hand, dopin
Externí odkaz:
https://doaj.org/article/60585bc74d1f4d749aab25fed586a509
Autor:
Bowen Zhang, Zhipeng Wei, Xinwei Wang, Xuan Fang, Dengkui Wang, Xian Gao, Dan Fang, Xiaohua Wang, Rui Chen
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5
Externí odkaz:
https://doaj.org/article/1728b73a8bc24b6c9b5e4ea86fb38485
Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment
Autor:
Xuan Fang, Zhipeng Wei, Dan Fang, Xueying Chu, Jilong Tang, Dengkui Wang, Xinwei Wang, Jinhua Li, Yongfeng Li, Bin Yao, Xiaohua Wang, Rui Chen
Publikováno v:
ACS Omega, Vol 3, Iss 4, Pp 4412-4417 (2018)
Externí odkaz:
https://doaj.org/article/c4a00721fec14f5c87b8baad571b2e93
Autor:
Chenhao Gao, Keyi Zhong, Xuan Fang, Dan Fang, Hongbin Zhao, Dengkui Wang, Bobo Li, Yingjiao Zhai, Xueying Chu, Jinhua Li, Xiaohua Wang
Publikováno v:
Energies, Vol 14, Iss 19, p 6403 (2021)
As a typical wide bandgap semiconductor, ZnO has received a great deal of attention from researchers because of its strong physicochemical characteristics. During the past few years, great progress has been made in the optoelectronic applications of
Externí odkaz:
https://doaj.org/article/762bd5845f9041f9a56551418cbcb247