Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Deng Xie"'
Autor:
Zhe Chuan Feng, Jiamin Liu, Deng Xie, Manika Tun Nafisa, Chuanwei Zhang, Lingyu Wan, Beibei Jiang, Hao-Hsiung Lin, Zhi-Ren Qiu, Weijie Lu, Benjamin Klein, Ian T. Ferguson, Shiyuan Liu
Publikováno v:
Materials, Vol 17, Iss 12, p 2921 (2024)
GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant mole
Externí odkaz:
https://doaj.org/article/ba9752e518824bcc952da569dc862ff4
Autor:
Deng Xie, Guangzhen Luo, Yicheng Zhong, Yuelin Mao, Mingwei Yuan, Ying Yu, Chao Chen, Weiming Xiao, Shuhua Wang
Publikováno v:
ACS Applied Nano Materials. 4:10999-11006
Publikováno v:
Annals of palliative medicine. 11(1)
Multiple randomized controlled trials have shown that targeted temperature management (TTM) has favorable effects in out-of-hospital cardiac arrest. However, the benefit of TTM in patients with in-hospital cardiac arrest (IHCA) remains to be verified
Akademický článek
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Autor:
Zhe Chuan Feng, Ting Mei, Deng Xie, Hung-Hsiang Cheng, Shiyuan Liu, Lingyu Wan, Zhi Ren Qiu, Devki N. Talwar
Publikováno v:
Applied Surface Science. 421:748-754
Comprehensive optical and structural properties are reported on several MBE grown thin Si 1-x Ge x epifilms and Si 1-x Ge x /Si superlattices with low Ge contents by using spectroscopic ellipsometry (SE), high resolution x-ray diffraction (HR-XRD) an
Publikováno v:
Transport in Porous Media; Dec2021, Vol. 140 Issue 3, p643-666, 24p
Publikováno v:
Asia Communications and Photonics Conference.
Mg 0.06 Zn 0.94 O films are epitaxially grown at 350 to 650 oC. Depolarization effect was found occurs at ∼390 nm, while the thickness non-uniformity increases with growth temperature, ascribed to increased Mg incorporation into hexagonal ZnO phase
Publikováno v:
Asia Communications and Photonics Conference.
Indium cluster in InGaN epilayers prepared with different H 2 -treating times was investigated. In cluster with the form of lower atom bonds was evidenced by Raman spectra. Carrier lifetime was found to increase with the H 2 -treating time.
Publikováno v:
Communications in Theoretical Physics. 56:1027-1030
Inspired by the protocol presented by Bagherinezhad and Karimipour [Phys. Rev. A 67 (2003) 044302], which will be shown to be insecure, we present a multipartite quantum secret sharing protocol using reusable Greenberger—Horne—Zeilinger (GHZ) sta
Publikováno v:
Journal of Physics D: Applied Physics. 50:115102
A series of cubic 3C–SiC/Si samples with different thicknesses grown by chemical vapor deposition (CVD) was studied by Raman spectroscopy using laser excitation with different wavelengths plus spectral line shape analysis via two theoretical method