65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications

Autor: Tavel, B., Duriez, B., Gwoziecki, R., Basso, M.T., Julien, C., Ortolland, C., Laplanche, Y., Fox, R., Sabouret, E., Detcheverry, C., Boeuf, F., Morin, P., Barge, D., Bidaud, M., Biénacel, J., Garnier, P., Cooper, K., Chapon, J.D., Trouiller, Y., Belledent, J., Broekaart, M., Gouraud, P., Denais, M., Huard, V., Rochereau, K., Difrenza, R., Planes, N., Marin, M., Boret, S., Gloria, D., Vanbergue, S., Abramowitz, P., Vishnubhotla, L., Reber, D., Stolk, P., Woo, M., Arnaud, F.

Publikováno v: In Solid State Electronics 2006 50(4):573-578

NBTI degradation: From physical mechanisms to modelling

Autor: Huard, V., Denais, M., Parthasarathy, C.

Publikováno v: In Microelectronics Reliability 2006 46(1):1-23

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs

Autor: Bravaix, A., Goguenheim, D., Denais, M., Huard, V., Parthasarathy, C., Perrier, F., Revil, N., Vincent, E.

Publikováno v: In Microelectronics Reliability 2005 45(9):1370-1375

A thorough investigation of MOSFETs NBTI degradation

Autor: Huard, V., Denais, M., Perrier, F., Revil, N., Parthasarathy, C., Bravaix, A., Vincent, E.

Publikováno v: In Microelectronics Reliability 2005 45(1):83-98

Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

Autor: Ribes, G., Bruyère, S., Roy, D., Parthasarathy, C., Muller, M., Denais, M., Huard, V., Skotnicki, T., gerard ghibaudo

Publikováno v: IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2006, 6, pp.132
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Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b9c5a437ce20aeb6ec513ba1f2bacfd8
https://hal.archives-ouvertes.fr/hal-00145108