Automated Speech Analysis for Risk Detection of Depression, Anxiety, Insomnia, and Fatigue: Algorithm Development and Validation Study.

Autor: Riad R; Callyope, Paris, France., Denais M; Callyope, Paris, France., de Gennes M; Callyope, Paris, France., Lesage A; Callyope, Paris, France., Oustric V; Callyope, Paris, France., Cao XN; Callyope, Paris, France., Mouchabac S; Department of Psychiatry, Saint-Antoine Hospital, Sorbonne University, Assistance publique - Hôpitaux de Paris, Paris, France.; Infrastructure for Clinical Research in Neurosciences, Paris Brain Institute, Paris, France., Bourla A; Department of Psychiatry, Saint-Antoine Hospital, Sorbonne University, Assistance publique - Hôpitaux de Paris, Paris, France.; Infrastructure for Clinical Research in Neurosciences, Paris Brain Institute, Paris, France.; Medical Strategy and Innovation Department, Clariane, Paris, France.; NeuroStim Psychiatry Practice, Paris, France.

Publikováno v: Journal of medical Internet research [J Med Internet Res] 2024 Oct 31; Vol. 26, pp. e58572. Date of Electronic Publication: 2024 Oct 31.

Designing in reliability in advanced CMOS technologies

Autor: Parthasarathy, C.R., Denais, M., Huard, V., Ribes, G., Roy, D., Guerin, C., Perrier, F., Vincent, E., Bravaix, A.

Publikováno v: In Microelectronics Reliability 2006 46(9):1464-1471

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

Autor: Ribes, G., Bruyère, S., Denais, M., Monsieur, F., Huard, V., Roy, D., Ghibaudo, G.

Publikováno v: In Microelectronics Reliability 2005 45(12):1842-1854

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown

Autor: Ribes, G. ^*, Bruyère, S., Denais, M., Roy, D., Ghibaudo, G.

Publikováno v: In Microelectronics Reliability 2005 45(5):841-844

Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study

Autor: Ribes, G, Bruyère, S, Denais, M, Monsieur, F, Huard, V, Roy, D, Ghibaudo, G

Publikováno v: In Microelectronic Engineering 2004 72(1):10-15