Výsledky vyhledávání - "Den Hertog MI"

Akademický článek

Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy.

Autor: Dosenovic D; Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France., Dechamps S; Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France.; Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium., Sharma K; Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France., Rouviere JL; Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France., Lu Y; Univ. Grenoble Alpes, CNRS-Institut Néel, F-38000 Grenoble, France., den Hertog MI; Univ. Grenoble Alpes, CNRS-Institut Néel, F-38000 Grenoble, France., Genovese L; Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France., Dubois SM; Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium., Charlier JC; Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium., Jamet M; Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France., Marty A; Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France., Okuno H; Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France.

Publikováno v: ACS nano [ACS Nano] 2024 Aug 27; Vol. 18 (34), pp. 23354-23364. Date of Electronic Publication: 2024 Aug 15.

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Akademický článek

Understanding the Electronic Transport of Al-Si and Al-Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy.

Autor: Behrle R; Institute of Solid State Electronics, Technische Universität Wien, Vienna 1040, Austria., Murphey CGE; Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States., Cahoon JF; Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States., Barth S; Physics Institute, Goethe Universität Frankfurt, Frankfurt am Main 60438, Germany.; Institute of Inorganic and Analytical Chemistry, Goethe Universität Frankfurt, Frankfurt am Main 60438, Germany., den Hertog MI; Institut Néel, CNRS UPR2940, Grenoble 38042, France., Weber WM; Institute of Solid State Electronics, Technische Universität Wien, Vienna 1040, Austria., Sistani M; Institute of Solid State Electronics, Technische Universität Wien, Vienna 1040, Austria.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Apr 17; Vol. 16 (15), pp. 19350-19358. Date of Electronic Publication: 2024 Apr 02.

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Akademický článek

Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM.

Autor: da Silva BC; Université Grenoble Alpes, CNRS-Institut Néel, F-38000Grenoble, France., Sadre Momtaz Z; Université Grenoble Alpes, CNRS-Institut Néel, F-38000Grenoble, France., Monroy E; Université Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, F-38000Grenoble, France., Okuno H; Université Grenoble Alpes, CEA, IRIG, MEM, LEMMA, F-38000Grenoble, France., Rouviere JL; Université Grenoble Alpes, CEA, IRIG, MEM, LEMMA, F-38000Grenoble, France., Cooper D; Université Grenoble Alpes, CEA-LETI, F-38000Grenoble, France., Den Hertog MI; Université Grenoble Alpes, CNRS-Institut Néel, F-38000Grenoble, France.

Publikováno v: Nano letters [Nano Lett] 2022 Dec 14; Vol. 22 (23), pp. 9544-9550. Date of Electronic Publication: 2022 Nov 28.

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Akademický článek

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic.

Autor: Sistani M; Institute of Solid State Electronics, TU Wien, 1040 Vienna, Austria., Böckle R; Institute of Solid State Electronics, TU Wien, 1040 Vienna, Austria., Falkensteiner D; Institute of Solid State Electronics, TU Wien, 1040 Vienna, Austria., Luong MA; University Grenoble Alpes, CEA, IRIG-DEPHY-MEM-LEMMA, F-38000 Grenoble, France., den Hertog MI; Institut NEEL CNRS/UGA UPR2940, F-38042 Grenoble, France., Lugstein A; Institute of Solid State Electronics, TU Wien, 1040 Vienna, Austria., Weber WM; Institute of Solid State Electronics, TU Wien, 1040 Vienna, Austria.

Publikováno v: ACS nano [ACS Nano] 2021 Nov 23; Vol. 15 (11), pp. 18135-18141. Date of Electronic Publication: 2021 Oct 27.

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Akademický článek

Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope.

Autor: Conlan AP; Univ. Grenoble Alpes, CEA-LETI, F-38000 Grenoble, France., Luong MA; Univ. Grenoble Alpes, CNRS-Institut Néel, 25 Avenue des Martyrs, F-38000 Grenoble, France., Gentile P; Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 17 av. des Martyrs, F-38000 Grenoble, France., Moldovan G; Point Electronic GmbH, Erich-Neuss-Weg 15, D-06120 Halle (Saale), Germany., Den Hertog MI; Univ. Grenoble Alpes, CNRS-Institut Néel, 25 Avenue des Martyrs, F-38000 Grenoble, France., Monroy E; Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 17 av. des Martyrs, F-38000 Grenoble, France., Cooper D; Univ. Grenoble Alpes, CEA-LETI, F-38000 Grenoble, France.

Publikováno v: Nanotechnology [Nanotechnology] 2021 Oct 29; Vol. 33 (3). Date of Electronic Publication: 2021 Oct 29.

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Akademický článek

Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect.

Autor: Delaforce J; Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France., Sistani M; Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria., Kramer RBG; Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France., Luong MA; Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France., Roch N; Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France., Weber WM; Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria., den Hertog MI; Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France., Robin E; Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France., Naud C; Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France., Lugstein A; Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria., Buisson O; Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2021 Oct; Vol. 33 (39), pp. e2101989. Date of Electronic Publication: 2021 Aug 08.

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Akademický článek

Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions.

Autor: Sistani M; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria., Bartmann MG; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria., Güsken NA; The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom., Oulton RF; The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom., Keshmiri H; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria., Luong MA; Univ. Grenoble Alpes, CEA, INAC, MEM, F-38000 Grenoble, France., Momtaz ZS; Institut NEEL CNRS/UGA UPR2940, 25 avenue des Martyrs, F-38042 Grenoble, France., Den Hertog MI; Institut NEEL CNRS/UGA UPR2940, 25 avenue des Martyrs, F-38042 Grenoble, France., Lugstein A; Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria.

Publikováno v: ACS photonics [ACS Photonics] 2020 Jul 15; Vol. 7 (7), pp. 1642-1648. Date of Electronic Publication: 2020 Jun 30.

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Akademický článek

Stimulated Raman Scattering in Ge Nanowires.

Autor: Sistani M; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria., Bartmann MG; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria., Güsken NA; The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K., Oulton RF; The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K., Keshmiri H; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria., Luong MA; Université Grenoble Alpes, CEA, IRIG-DEPHY, Grenoble 38054, France., Robin E; Université Grenoble Alpes, CEA, IRIG-DEPHY, Grenoble 38054, France., den Hertog MI; Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble 38042, France., Lugstein A; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria.

Publikováno v: The journal of physical chemistry. C, Nanomaterials and interfaces [J Phys Chem C Nanomater Interfaces] 2020 Jun 25; Vol. 124 (25), pp. 13872-13877. Date of Electronic Publication: 2020 May 28.

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Akademický článek

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources.

Autor: Dimkou I; Univ. Grenoble-Alpes, CEA, LETI, F-38000 Grenoble, France., Harikumar A, Donatini F, Lähnemann J, den Hertog MI, Bougerol C, Bellet-Amalric E, Mollard N, Ajay A, Ledoux G, Purcell ST, Monroy E

Publikováno v: Nanotechnology [Nanotechnology] 2020 May 15; Vol. 31 (20), pp. 204001. Date of Electronic Publication: 2020 Jan 27.

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