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Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO 2 ) based dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3193d3547de2a1e53a88b3eda495ef63
https://doi.org/10.1109/edtm.2018.8421452
https://doi.org/10.1109/edtm.2018.8421452
