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Akademický článek
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Autor:
Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia., Golyashov VA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia., Rusetsky VS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Kustov DA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia., Mironov AV; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Demin AY; CJSC 'Ekran FEP', Novosibirsk 630060, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Jan 19; Vol. 13 (3). Date of Electronic Publication: 2023 Jan 19.
Autor:
Rusetsky VS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Golyashov VA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia.; Novosibirsk State University, Novosibirsk 630090 Russia., Eremeev SV; Institute of Strength Physics and Materials Science, Tomsk 634055, Russia., Kustov DA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia., Rusinov IP; Tomsk State University, Tomsk 634050, Russia., Shamirzaev TS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Novosibirsk State University, Novosibirsk 630090 Russia., Mironov AV; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Demin AY; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia.; Novosibirsk State University, Novosibirsk 630090 Russia.
Publikováno v:
Physical review letters [Phys Rev Lett] 2022 Oct 14; Vol. 129 (16), pp. 166802.
Autor:
Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation., Golyashov VA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation., Rusetsky VS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation., Mironov AV; CJSC EKRAN-FEP, Novosibirsk 630060, Russian Federation., Demin AY; CJSC EKRAN-FEP, Novosibirsk 630060, Russian Federation., Aksenov VV; CJSC EKRAN-FEP, Novosibirsk 630060, Russian Federation.
Publikováno v:
Journal of synchrotron radiation [J Synchrotron Radiat] 2021 May 01; Vol. 28 (Pt 3), pp. 864-875. Date of Electronic Publication: 2021 Mar 30.