Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Demid S. Abramkin"'
Autor:
Demid S. Abramkin, Mikhail O. Petrushkov, Dmitrii B. Bogomolov, Eugeny A. Emelyanov, Mikhail Yu. Yesin, Andrey V. Vasev, Alexey A. Bloshkin, Eugeny S. Koptev, Mikhail A. Putyato, Victor V. Atuchin, Valery V. Preobrazhenskii
Publikováno v:
Nanomaterials, Vol 13, Iss 5, p 910 (2023)
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs’ formation by molecular beam epitaxy on both mat
Externí odkaz:
https://doaj.org/article/e4ad2f080dd44be0983457d1dfe2e7b7
Autor:
Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii
Publikováno v:
Nanomaterials, Vol 12, Iss 24, p 4449 (2022)
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural prop
Externí odkaz:
https://doaj.org/article/7dbc3147a1d048e38e57c7e12aed3698
Autor:
Demid S. Abramkin, Victor V. Atuchin
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3794 (2022)
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central goal of this field is the search for a novel SAQD
Externí odkaz:
https://doaj.org/article/4f8905bd12e743a1a02586b29bf131c8