Theoretical and experimental considerations on the spin field effect transistor

Autor: Bournel, A ^*, Delmouly, V, Dollfus, P, Tremblay, G, Hesto, P

Publikováno v: In Physica E: Low-dimensional Systems and Nanostructures 2001 10(1):86-90

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Autor: Maher, H., Delmouly, V., Rouchy, U., Renvoise, M., Frijlink, P., Smith, D., Zaknoune, M., Ducatteau, D., Avramovic, V., Scavennec, A., Godin, J., Riet, M., cristell maneux, Ardouin, B.

Publikováno v: Conference Proceedings-International Conference on Indium Phosphide and Related Materials
Conference Proceedings-International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68
Proceedings of 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4
Scopus-Elsevier

International audience; In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d94857a2fc201b366a2a5204f9bebd86
https://hal.archives-ouvertes.fr/hal-00671674