Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Delgermaa Nergui"'
Autor:
Jeffrey W. Teng, Delgermaa Nergui, George N. Tzintzarov, Brett L. Ringel, Zachary R. Brumbach, Justin P. Heimerl, Yaw A. Mensah, Jackson P. Moody, Dennis O. Thorbourn, Linda Del Castillo, Mohammad M. Mojarradi, Benjamin J. Blalock, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 70:611-619
Autor:
Delgermaa Nergui, Jeffrey W. Teng, Mozghan Hosseinzadeh, Yaw Mensah, Kan Li, Mariia Gorchichko, Adrian Ildefonso, Brett L. Ringel, En Xia Zhang, Daniel M. Fleetwood, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1079-1084
Autor:
Kan Li, Hanbin Ying, En Xia Zhang, Daniel M. Fleetwood, R. Nathan Nowlin, Yaw Mensah, Hari Parameswaran, Delgermaa Nergui, Adrian Ildefonso, Nelson E. Sepulveda-Ramos, Nathaniel A. Dodds, Jeffrey W. Teng, George N. Tzintzarov, Brett Ringel, Mariia Gorchichko, Clifford D. Cheon, John D. Cressler, Sunil G. Rao
Publikováno v:
IEEE Transactions on Nuclear Science. 69:282-289
Autor:
George N. Tzintzarov, Jeffrey W. Teng, Amanda N. Bozovich, Gregory R. Allen, Delgermaa Nergui, Yaw A. Mensah, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 69:527-533
Autor:
Adrian Ildefonso, Joel M. Hales, Ani Khachatrian, Jeffrey W. Teng, George N. Tzintzarov, Delgermaa Nergui, Brett L. Ringel, Uppili Raghunathan, Vibhor Jain, John D. Cressler, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Autor:
Joel M. Hales, Stephen P. Buchner, Jeffrey H. Warner, John D. Cressler, Adrian Ildefonso, Ani Khachatrian, George N. Tzintzarov, Dale McMorrow, Stephen LaLumondiere, Delgermaa Nergui, Daniele M. Monahan
Publikováno v:
IEEE Transactions on Nuclear Science. 67:81-90
A novel approach for two-photon absorption (TPA) pulsed-laser testing produces extended charge deposition profiles that are analogous to those produced by heavy ions. In this approach, which utilizes an axicon rather than a spherical lens, the conven
Autor:
Mehmet Kaynak, Jacob Campbell, George N. Tzintzarov, Patrick S. Goley, Stephen P. Buchner, Ani Khachatrian, Lars Zimmermann, Dale McMorrow, Jeffrey W. Teng, Delgermaa Nergui, Milad Frounchi, Adrian Ildefonso, John D. Cressler, Sunil G. Rao, Jeffrey H. Warner
Publikováno v:
IEEE Transactions on Nuclear Science. 67:260-267
The propagation of single-event transients from the electrical to the photonic domain in a segmented Mach–Zehnder modulator was investigated using pulsed-laser measurements and lumerical simulations. Although electrical transients can heavily degra
Autor:
J. P. Bonsall, Dale Brewe, Patrick S. Goley, John D. Cressler, Nelson E. Lourenco, Zachary E. Fleetwood, Delgermaa Nergui, Adrian Ildefonso, Anup P. Omprakash, George N. Tzintzarov, Hunter Kettering, Stephen LaLumondiere, Daniele M. Monahan
Publikováno v:
IEEE Transactions on Nuclear Science. 67:91-98
This article presents an experimental study of single-event transients (SETs) induced by pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs). Device-level transient data and circuit-level upset data from pulsed X-rays are analyzed and com
Autor:
George N. Tzintzarov, Joel M. Hales, Ani Khachatrian, Patrick S. Goley, Dale McMorrow, Delgermaa Nergui, Stephen P. Buchner, Jeffrey H. Warner, Adrian Ildefonso, John D. Cressler, Anup P. Omprakash
Publikováno v:
IEEE Transactions on Nuclear Science. 67:71-80
A comparison of heavy-ion-induced single-event transients (SETs) in silicon–germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on-insulator (SOI) substrates is presented. Experimental heavy-ion data show a
Autor:
Ani Khachatrian, Delgermaa Nergui, Joseph Harms, Stephen P. Buchner, Joel M. Hales, George N. Tzintzarov, Zachary E. Fleetwood, Anna Erickson, Adrian Ildefonso, Milad Frounchi, Veronique Ferlet-Cavrois, Jeffrey H. Warner, John D. Cressler, Dale McMorrow, Kay Voss
Publikováno v:
IEEE Transactions on Nuclear Science. 66:359-367
An approach for determining the optimal laser parameters (i.e., pulse energy, focused spot size, wavelength, and pulse duration) for correlating single-event transients induced via two-photon absorption (TPA) and heavy ions is presented. The approach