Zobrazeno 1 - 10
of 1 466
pro vyhledávání: '"Deleonibus, S."'
Publikováno v:
Eur. Phys. J. B 70, 475-481 (2009)
We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in many experimental systems. We show that a single background charge is eno
Externí odkaz:
http://arxiv.org/abs/0810.0672
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the tran
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609245
Publikováno v:
Euro. Phys. Jour. B. 54, 299-307 (2006)
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies accurately and w
Externí odkaz:
http://arxiv.org/abs/cond-mat/0504325
Autor:
Bohm, M., Hofheinz, M., Jehl, X., Sanquer, M., Vinet, M., Previtali, B., Fraboulet, D., Mariolle, D., Deleonibus, S.
We investigate small artificial quantum dots obtained by geometrically controlled resistive confinement in low mobility silicon-on-insulator nanowires. Addition spectra were recorded at low temperature for various dot areas fixed by lithography. We c
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411236
We investigate coherent transport in Si:MOSFETs with nominal gate lengths 50 to 100nm and various widths at very low temperature. Independent of the geometry, localized states appear when G=e^{2}/h and transport is dominated by resonant tunnelling th
Externí odkaz:
http://arxiv.org/abs/cond-mat/9908076
Autor:
Vinet, M., Batude, P., Tabone, C., Previtali, B., LeRoyer, C., Pouydebasque, A., Clavelier, L., Valentian, A., Thomas, O., Michaud, S., Sanchez, L., Baud, L., Roman, A., Carron, V., Nemouchi, F., Mazzocchi, V., Grampeix, H., Amara, A., Deleonibus, S., Faynot, O.
Publikováno v:
In Microelectronic Engineering 2011 88(4):331-335
Autor:
Widiez, J., Rabarot, M., Saada, S., Mazellier, J.-P., Dechamp, J., Delaye, V., Roussin, J.-C., Andrieu, F., Faynot, O., Deleonibus, S., Bergonzo, P., Clavelier, L.
Publikováno v:
In Solid State Electronics February 2010 54(2):158-163
Autor:
Rabarot, M., Widiez, J., Saada, S., Mazellier, J.-P., Lecouvey, C., Roussin, J.-C., Dechamp, J., Bergonzo, P., Andrieu, F., Faynot, O., Deleonibus, S., Clavelier, L., Roger, J.P.
Publikováno v:
In Diamond & Related Materials 2010 19(7):796-805
Autor:
Dupré, C., Ernst, T., Bernard, E., Guillaumot, B., Vulliet, N., Coronel, P., Skotnicki, T., Cristoloveanu, S., Ghibaudo, G., Faynot, O., Deleonibus, S.
Publikováno v:
In Solid State Electronics 2009 53(7):746-752
Autor:
Bocquet, M., Molas, G., Perniola, L., Garros, X., Buckley, J., Gély, M., Colonna, J.P., Grampeix, H., Martin, F., Vidal, V., Toffoli, A., Deleonibus, S., Ghibaudo, G., Pananakakis, G., De Salvo, B.
Publikováno v:
In Solid State Electronics 2009 53(7):786-791