Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Deleep R. Nair"'
Autor:
Dibakar Yadav, Deleep R. Nair
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 308-315 (2020)
We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFETs (NWFETs) were simulated at a scaled gate length (LG) of 10 nm, using
Externí odkaz:
https://doaj.org/article/a82bf37b6b08483cb1f03701d4a3f2e0
Autor:
Sruthi M. P., Ajay Shanbhag, Deleep R. Nair, Anjan Chakravorty, Muhammad Ashraful Alam, Nandita DasGupta, Amitava Dasgupta
Publikováno v:
IEEE Transactions on Electron Devices. 70:979-985
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56654280f00330488ce1ff4d452dd4eb
https://doi.org/10.1109/ted.2023.3240018
https://doi.org/10.1109/ted.2023.3240018
Autor:
K. Nidhin, Suresh Balanethiram, Deleep R. Nair, Rosario D'Esposito, Nihar R. Mohapatra, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty
Publikováno v:
IEEE Transactions on Electron Devices. 69:6541-6546
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9612411da39d23d137bd30343d900005
https://doi.org/10.1109/ted.2022.3215715
https://doi.org/10.1109/ted.2022.3215715
Publikováno v:
2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cf38de65cca3bf622931c51d2a531f2
https://doi.org/10.1109/eurosime56861.2023.10100769
https://doi.org/10.1109/eurosime56861.2023.10100769
Autor:
M P Sruthi, M. Asaduz Zaman Mamun, Deleep R Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta, Muhammad Ashraful Alam
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f98ebd0e824fbdf03800c6263271012
https://doi.org/10.1109/irps48203.2023.10118187
https://doi.org/10.1109/irps48203.2023.10118187
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 451-458 (2016)
Surface roughness is an important factor that influences the reliability and performance of radio frequency microelectromechanical systems switches. The presence of surface roughness impedes a perfect contact in the down-state condition of the switch
Externí odkaz:
https://doaj.org/article/f108f7dee83f4022a845dabbf01091d1
Publikováno v:
IEEE Transactions on Electron Devices. 69:456-461
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8f647331d388f77cc52cfae0b68193
https://doi.org/10.1109/ted.2021.3133203
https://doi.org/10.1109/ted.2021.3133203
Autor:
Om Maheshwari, Ravins Katiyar, Amitava Dasgupta, Anjan Chakravorty, Deleep R. Nair, Nihar R. Mohapatra
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87792bf621470a0ecc83af32dfee733f
https://doi.org/10.1109/icee56203.2022.10118318
https://doi.org/10.1109/icee56203.2022.10118318
Autor:
Sruthi M P, Nidhin K, Ajay Shanbhag, Deleep R Nair, Anjan Chakravorty, Nandita DasGupta, Amitava Das Gupta
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcccbacfb467118dc3055ada6ec497ff
https://doi.org/10.1109/bcicts53451.2022.10051754
https://doi.org/10.1109/bcicts53451.2022.10051754
Publikováno v:
2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d179ded2415d0e2d5a53370127f53cf
https://doi.org/10.1109/estc55720.2022.9939395
https://doi.org/10.1109/estc55720.2022.9939395