Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Del Pozo-Zamudio O"'
Autor:
Del Pozo-Zamudio, O., Genco, A., Schwarz, S., Withers, F., Walker, P. M., Godde, T., Schofield, R. C., Rooney, A. P., Prestat, E., Watanabe, K., Taniguchi, T., Clark, C., Haigh, S. J., Krizhanovskii, D. N., Novoselov, K. S., Tartakovskii, A. I.
Publikováno v:
O. Del Pozo-Zamudio et al. 2D materials 7 (2020) 3, 031006
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal
Externí odkaz:
http://arxiv.org/abs/1911.06808
Autor:
Del Pozo-Zamudio, O., Puebla, J., Krysa, A. B., Toro, R., Sanchez, A. M., Beanland, R., Tartakovskii, A. I., Skolnick, M. S., Chekhovich, E. A.
Publikováno v:
Phys. Rev. Materials 1, 034605 (2017)
We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into q
Externí odkaz:
http://arxiv.org/abs/1705.02093
Autor:
Lara-Alfaro, H. F., Barranco-Cisneros, J., Torres-Rosales, A. A., Del Pozo-Zamudio, O., Solís-Macías, J., Ariza-Flores, A. D., Cerda-Méndez, E. A.
Publikováno v:
Journal of Applied Physics; 8/28/2023, Vol. 134 Issue 8, p1-10, 10p
Autor:
Schmidt, D., Godde, T., Schmutzler, J., Aßmann, M., Debus, J., Withers, F., Alexeev, E. M., Del Pozo-Zamudio, O., Skrypka, O. V., Novoselov, K. S., Bayer, M., Tartakovskii, A. I.
Publikováno v:
Phys. Rev. B 94, 165301 (2016)
We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and tim
Externí odkaz:
http://arxiv.org/abs/1608.04031
Autor:
Withers, F., Del Pozo-Zamudio, O., Schwarz, S., Dufferwiel, S., Walker, P. M., Godde, T., Rooney, A. P., Gholinia, A., Woods, C. R., Blake, P., Haigh, S. J., Watanabe, K., Taniguchi, T., Aleiner, I. L., Geim, A. K., Falko, V. I., Tartakovskii, A. I., Novoselov, K. S.
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between at
Externí odkaz:
http://arxiv.org/abs/1511.06265
Autor:
Del Pozo-Zamudio, O., Schwarz, S., Klein, J., Schofield, R. C., Chekhovich, E. A., Ceylan, O., Margapoti, E., Dmitriev, A. I., Lashkarev, G. V., Borisenko, D. N., Kolesnikov, N. N., Finley, J. J., Tartakovskii, A. I.
Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selen
Externí odkaz:
http://arxiv.org/abs/1506.05619
Autor:
Dufferwiel, S., Schwarz, S., Withers, F., Trichet, A. A. P., Li, F., Sich, M., Del Pozo-Zamudio, O., Clark, C., Nalitov, A., Solnyshkov, D. D., Malpuech, G., Novoselov, K. S., Smith, J. M., Skolnick, M. S., Krizhanovskii, D. N., Tartakovskii, A. I.
Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for con
Externí odkaz:
http://arxiv.org/abs/1505.04438
Autor:
Del Pozo-Zamudio, O., Schwarz, S., Sich, M., Akimov, I. A., Bayer, M., Schofield, R. C., Chekhovich, E. A., Robinson, B. J., Kay, N. D., Kolosov, O. V., Dmitriev, A. I., Lashkarev, G. V., Borisenko, D. N., Kolesnikov, N. N., Tartakovskii, A. I.
Publikováno v:
2D Materials, 2 (3), 035010 (2015)
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materia
Externí odkaz:
http://arxiv.org/abs/1501.02214
Autor:
Withers, F., Del Pozo-Zamudio, O., Mishchenko, A., Rooney, A. P., Gholinia, A., Watanabe, K., Taniguchi, T., Haigh, S. J., Geim, A. K., Tartakovskii, A. I., Novoselov, K. S.
Publikováno v:
Nature Materials, 14, 301-306 (2015)
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with ne
Externí odkaz:
http://arxiv.org/abs/1412.7621
Autor:
Sercombe, D., Schwarz, S., Del Pozo-Zamudio, O., Liu, F., Robinson, B. J., Chekhovich, E. A., Tartakovskii, I. I., Kolosov, O., Tartakovskii, A. I.
Publikováno v:
Scientific Reports 3, 3489 (2013)
Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requir
Externí odkaz:
http://arxiv.org/abs/1304.7221