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of 7
pro vyhledávání: '"Dejan Klement"'
Autor:
Matjaž Spreitzer, Dejan Klement, Tjaša Parkelj Potočnik, Urška Trstenjak, Zoran Jovanović, Minh Duc Nguyen, Huiyu Yuan, Johan Evert ten Elshof, Evert Houwman, Gertjan Koster, Guus Rijnders, Jean Fompeyrine, Lior Kornblum, David P. Fenning, Yunting Liang, Wen-Yi Tong, Philippe Ghosez
Publikováno v:
APL Materials, Vol 9, Iss 4, Pp 040701-040701-13 (2021)
Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hind
Externí odkaz:
https://doaj.org/article/f077300c8ed644c9a68dd36479e9078a
Autor:
Franc Vrecer, Tomislav Vrbanec, Maja Preskar, Mirjana Gašperlin, Dejan Klement, Klemen Korasa
Publikováno v:
Drug Development and Industrial Pharmacy. 47:758-769
The freeze-drying process is an expensive, time-consuming and rather complex process. Therefore, process analytical technology (PAT) tools have been introduced to develop an optimized process and control critical process parameters, which affect the
Publikováno v:
Ceramics International. 41:15128-15137
The formation of tetragonal BaTiO3 from K2Ti6O13 (K2T6) nanowires was examined under hydrothermal conditions at 100–240 °C. The morphology and the crystal structure of the BaTiO3 particles that grew via a dissolution–precipitation mechanism were
Publikováno v:
ACS Applied Materials and Interfaces
The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using Sr-induced deoxidation. The manipulation of metallic Sr is nevertheless very delicate and requires alterna
Publikováno v:
Journal of the European Ceramic Society. 34:1537-1545
AgNb 0.5 Ta 0.5 O 3 ceramics were synthesized and analyzed, with respect to their dielectric properties, in the radio- and microwave-frequency ranges. The influences of different synthesis conditions were investigated and correlated with the difficul
Publikováno v:
Applied Physics Letters. 106:119901
Publikováno v:
Applied Physics Letters. 106:071602
The formation of a ½ monolayer (ML) of strontium (Sr) on Si(001) represents the most widely used and effective passivation procedure for the epitaxial growth of strontium titanate (SrTiO3) on Si with molecular beam epitaxy (MBE). In the present stud