Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Deirdre L Olynick"'
Autor:
Jaeho Lee, Woochul Lee, Geoff Wehmeyer, Scott Dhuey, Deirdre L. Olynick, Stefano Cabrini, Chris Dames, Jeffrey J. Urban, Peidong Yang
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Low thermal conductivities in nanomeshes have been attributed to both wave-like and particle-like behaviour of phonons. Here, the authors use periodicity-controlled silicon nanomeshes to show that the particle backscattering effect dominates for peri
Externí odkaz:
https://doaj.org/article/11fabd7f2d1b43879f517bb22cfd5bab
Autor:
Adam M. Schwartzberg, Christian Schäfer, Monika Fleischer, Stefano Cabrini, Alexander Weber-Bargioni, Florian Laible, Deirdre L. Olynick, Dieter P. Kern, P. James Schuck, Pradeep N. Perera
Publikováno v:
Nanoscale, vol 12, iss 37
Plasmonic nanostructures serve as optical antennas for concentrating the energy of incoming light in localized hotspots close to their surface. By positioning nanoemitters in the antenna hotspots, energy transfer is enabled, leading to novel hybrid a
Autor:
Adam M. Schwartzberg, Deirdre L. Olynick, Shaul Aloni, D. Frank Ogletree, Aeron T. Hammack, Bethanie J. H. Stadler, Scott Dhuey, Lauren M. Otto
Publikováno v:
Nanophotonic Materials XIII.
Publisher’s Note: This paper, originally published on 3 October 2016, was replaced with a corrected version on 12 May 2020. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Servi
Publikováno v:
Nanoscale. 10:22884-22895
In scanning electron microscopy (SEM), imaging nanoscale features by means of the cross-sectioning method becomes increasingly challenging with shrinking feature sizes. However, obtaining high quality images, at high magnification, is crucial for cri
Autor:
Bo Xu, Oleg Kostko, Paul D. Ashby, Kristina D. Closser, Yi Liu, David Prendergast, Gregory M. Wallraff, William D. Hinsberg, Patrick P. Naulleau, Deirdre L. Olynick, D. Frank Ogletree, Daniel Slaughter, Musahid Ahmed
Publikováno v:
The Journal of chemical physics, vol 149, iss 15
Kostko, O; Xu, B; Ahmed, M; Slaughter, DS; Ogletree, DF; Closser, KD; et al.(2018). Fundamental understanding of chemical processes in extreme ultraviolet resist materials. The Journal of chemical physics, 149(15), 154305. doi: 10.1063/1.5046521. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/50h4g627
Kostko, O; Xu, B; Ahmed, M; Slaughter, DS; Ogletree, DF; Closser, KD; et al.(2018). Fundamental understanding of chemical processes in extreme ultraviolet resist materials. The Journal of chemical physics, 149(15), 154305. doi: 10.1063/1.5046521. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/50h4g627
New photoresists are needed to advance extreme ultraviolet (EUV) lithography. The tailored design of efficient photoresists is enabled by a fundamental understanding of EUV induced chemistry. Processes that occur in the resist film after absorption o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fdd58fc45c42e90990ab6ff04573ab5
https://escholarship.org/uc/item/50h4g627
https://escholarship.org/uc/item/50h4g627
Autor:
Daniel Staaks, Deirdre L. Olynick, XiaoMin Yang, Stefano Dallorto, Kim Yang Lee, Stefano Cabrini, Ivo W. Rangelow, Adam M. Schwartzberg
Publikováno v:
Nanotechnology. 29(40)
The next generation of hard disk drive technology for data storage densities beyond 5 Tb/in2 will require single-bit patterning of features with sub-10 nm dimensions by nanoimprint lithography. To address this challenge master templates are fabricate
Publikováno v:
Advanced Materials. 27:5813-5819
Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2
Publikováno v:
Advanced Materials. 27:5778-5784
Complex materials are defined as nanostructured materials with combinations of structure and/or composition that lead to performance surpassing the sum of their individual components. There are many methods that can create complex materials; however,
Selective Laser Ablation in Resists and Block Copolymers for High Resolution Lithographic Patterning
Autor:
Dimas G. de Oteyza, Matthias Budden, Nathan D. Jarnagin, Deirdre L. Olynick, Thomas P. Russell, Zhiwei Sun, Ilja Gunkel, Prashant Kulshreshta, Pradeep N. Perera, Adam M. Schwartzberg, Ivo W. Rangelow, Cliff Henderson
Publikováno v:
Journal of Photopolymer Science and Technology. 28:663-668
Various embodiments of the invention demonstrate selective laser ablation processes as a means to create a block copolymer derived lithographic pattern through the selective removal of one block. Three block copolymer systems described PS-b-PHOST, P2
Autor:
Deirdre L. Olynick, Jaeho Lee, Woochul Lee, Jeffrey J. Urban, Peidong Yang, Geoff Wehmeyer, Stefano Cabrini, Chris Dames, Scott Dhuey
Publikováno v:
Nature Communications
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Lee, J; Lee, W; Wehmeyer, G; Dhuey, S; Olynick, DL; Cabrini, S; et al.(2017). Investigation of phonon coherence and backscattering using silicon nanomeshes. Nature Communications, 8. doi: 10.1038/ncomms14054. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/81v1159x
Nature communications, vol 8, iss 1
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Lee, J; Lee, W; Wehmeyer, G; Dhuey, S; Olynick, DL; Cabrini, S; et al.(2017). Investigation of phonon coherence and backscattering using silicon nanomeshes. Nature Communications, 8. doi: 10.1038/ncomms14054. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/81v1159x
Nature communications, vol 8, iss 1
Phonons can display both wave-like and particle-like behaviour during thermal transport. While thermal transport in silicon nanomeshes has been previously interpreted by phonon wave effects due to interference with periodic structures, as well as pho