Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Dehlinger, G."'
Autor:
Leturcq, R., L'Hote, D., Tourbot, R., Senz, V., Gennser, U., Ihn, T., Ensslin, K., Dehlinger, G., Grützmacher, D.
We study the resistivity vs. electric field dependence $\rho(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $\rho$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $\
Externí odkaz:
http://arxiv.org/abs/cond-mat/0107457
Autor:
Senz, V., Ihn, T., Heinzel, T., Ensslin, K., Dehlinger, G., Grützmacher, D., Gennser, U., Hwang, E. H., Sarma, S. Das
The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence
Externí odkaz:
http://arxiv.org/abs/cond-mat/0107369
Autor:
Doetsch, U., Gennser, U., Heinzel, T., Luescher, S., David, C., Dehlinger, G., Gruetzmacher, D., Ensslin, K.
Publikováno v:
Appl. Phys. Lett. 78, 341 (2001)
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0009323
Publikováno v:
Phys. Rev. Lett., Vol. 85 No. 20, p.4357, Nov 2000
We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insul
Externí odkaz:
http://arxiv.org/abs/cond-mat/0004312
Publikováno v:
Phys.Rev.B 61, R5082 (2000)
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field wi
Externí odkaz:
http://arxiv.org/abs/cond-mat/9910228
Autor:
Harame, D.L, Koester, S.J, Freeman, G, Cottrel, P, Rim, K, Dehlinger, G, Ahlgren, D, Dunn, J.S, Greenberg, D, Joseph, A, Anderson, F, Rieh, J.-S, Onge, S.A.S.T, Coolbaugh, D, Ramachandran, V, Cressler, J.D, Subbanna, S
Publikováno v:
In Applied Surface Science 2004 224(1):9-17
Autor:
Dehlinger, G, Diehl, L, Gennser, U, Sigg, H, Müller, E, Stutz, S, Faist, J, Stangl, J, Roch, T, Bauer, G, Grützmacher, D *
Publikováno v:
In Materials Science & Engineering B 2002 89(1):30-35
Publikováno v:
In Thin Solid Films 3 July 2000 369(1-2):390-393
Autor:
Roch, T., Medun˘a, M., Stangl, J., Hesse, A., Lechner, R. T., Bauer, G., Dehlinger, G., Diehl, L., Gennser, U., Mu¨ller, E., Gru¨tzmacher, D.
Publikováno v:
Journal of Applied Physics; 6/1/2002, Vol. 91 Issue 11, p8974, 5p, 1 Diagram, 1 Chart, 6 Graphs
Autor:
Dehlinger, G., Diehl, L., Gennser, U., Sigg, H., Faist, J., Ensslin, K., Grutzmacher, D., Muller, E.
Publikováno v:
Science. 12/22/2000, Vol. 290 Issue 5500, p2277-2280. 4p. 3 Graphs.