Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Deh-Ming Shyu"'
Autor:
Deh-Ming Shyu, 徐得銘
95
Critical dimension (CD) is the smallest size which must be resolved in specific measurement. The CD becomes smaller and smaller due to developments of technology and innovations of products. In the fabrication of integrated circuit, reliable
Critical dimension (CD) is the smallest size which must be resolved in specific measurement. The CD becomes smaller and smaller due to developments of technology and innovations of products. In the fabrication of integrated circuit, reliable
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/33502758311896154885
Autor:
Deh-Ming Shyu, 徐得銘
90
In this thesis, we have designed two kinds of optical elements, one is hybrid diffractive-refractive optical elements, the other is the wave -dividing element. The diffractive lens is characteristic of thinness and lightness, and cost effecti
In this thesis, we have designed two kinds of optical elements, one is hybrid diffractive-refractive optical elements, the other is the wave -dividing element. The diffractive lens is characteristic of thinness and lightness, and cost effecti
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/66641505205674906742
Publikováno v:
Optics Communications. 276:31-36
Through-focus focus-metric is a method that is used to analyze images on a fixed plane with the help of focus-metric values when the target moves through the focus. In this study, an optical microscope having a magnification of 250× is constructed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f3699b8cfc9d3a75927d75fe56f23d
https://doi.org/10.1016/j.optcom.2007.04.001
https://doi.org/10.1016/j.optcom.2007.04.001
Publikováno v:
International Journal of Modelling and Simulation. 21:234-239
In this paper, a simple finite difference beam propagation method (FDBPM) involving the fourth-order Runge-Kutta algorithm (RKBPM) is proposed to analyze 2-D and 3-D optical waveguides. We compare the accuracy and computational efficiency with those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5960e35ab16c84e2c02bdfe731ce3f
https://doi.org/10.1080/02286203.2001.11442207
https://doi.org/10.1080/02286203.2001.11442207
Publikováno v:
Optics express. 21(16)
One of the main challenges for 3D interconnect metrology of bonded wafers is measuring through opaque silicon wafers using conventional optical microscopy. We demonstrate here the use infrared microscopy, enhanced by implementing the differential int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f80fea30d7ef223b1ae1caa6f2acb23d
https://pubmed.ncbi.nlm.nih.gov/23938801
https://pubmed.ncbi.nlm.nih.gov/23938801
Publikováno v:
SPIE Proceedings.
Overlay metrology for stacked layers will be playing a key role in bringing 3D IC devices into manufacturing. However, such bonded wafer pairs present a metrology challenge for optical microscopy tools by the opaque nature of silicon. Using infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8662f4663d81864e95deba1afae48931
https://doi.org/10.1117/12.2021039
https://doi.org/10.1117/12.2021039
Autor:
Deh-Ming Shyu, Yi-Sha Ku
Publikováno v:
SPIE Proceedings.
Currently there are no in-line TSV (through silicon via) etch profile metrology tools suitable for use in high volume manufacturing. Cross-section SEM analysis can be utilized for process development, but it is a destructive technique. In our researc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d997093a10fc25eb94cc9e3265531ae5
https://doi.org/10.1117/12.916370
https://doi.org/10.1117/12.916370
Publikováno v:
SPIE Proceedings.
The continuous development of three-dimensional chip/wafer stacking technology has created the metrology requirements for in-line 3D manufacturing processes. This paper summarizes the developing metrology that has been used during via-middle & via-la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e30d277e6211d248f2f89d51cc96f5e4
https://doi.org/10.1117/12.915810
https://doi.org/10.1117/12.915810
Publikováno v:
SPIE Proceedings.
Semiconductor device packaging technology is rapidly advancing, in response to the demand for thinner and smaller electronic devices. Three-dimensional chip/wafer stacking that uses through-silicon vias (TSV) is a key technical focus area, and the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d935c46f6f07924897dba3602dd6f49
https://doi.org/10.1117/12.889401
https://doi.org/10.1117/12.889401
Publikováno v:
SPIE Proceedings.
We report results of theoretical modeling into a scatterometry-based method relevant to overlay measurement. A set of two array targets were designed with intentional offsets difference, d and d+20 nm, between the top and bottom grid arrays along the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42197fc81419607991dbbb8b5dbac88f
https://doi.org/10.1117/12.825524
https://doi.org/10.1117/12.825524