Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Degendt S."'
Publikováno v:
In Microelectronic Engineering 2007 84(9):2209-2212
Autor:
Pantisano, Luigi, Ragnarsson, L.-Å., Houssa, M., Degraeve, R., Groeseneken, G., Schram, T., Degendt, S., Heyns, M., Afanas’ev, V., Stesmans, A.
Publikováno v:
In Materials Science in Semiconductor Processing 2006 9(6):880-884
Autor:
Beckx, S., Demand, M., Locorotondo, S., Henson, K., Claes, M., Paraschiv, V., Shamiryan, D., Jaenen, P., Boullart, W., Degendt, S., Biesemans, S., Vanhaelemeersch, S., Vertommen, J., Coenegrachts, B.
Publikováno v:
In Microelectronics Reliability 2005 45(5):1007-1011
Autor:
Tsai, W. ∗, Carter, R.J., Nohira, H., Caymax, M., Conard, T., Cosnier, V., DeGendt, S., Heyns, M., Petry, J., Richard, O., Vandervorst, W., Young, E., Zhao, C., Maes, J., Tuominen, M., Schulte, W.H., Garfunkel, E., Gustafsson, T.
Publikováno v:
In Microelectronic Engineering 2003 65(3):259-272
Autor:
O’Sullivan, B. J., Pantisano, L., Roussel, P., Degraeve, R., Groeseneken, G., DeGendt, S., Heyns, M. M.
Publikováno v:
Journal of Applied Physics; 2/15/2007, Vol. 101 Issue 4, p044515-N.PAG, 6p, 1 Diagram, 7 Graphs
Autor:
Roozeboom, F., Narayanan, V., Kakushima, K., Timans, P.J., Gusev, E.P., Karim, Z., DeGendt, S.
Publikováno v:
ECS Transactions, 4, 66, III
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::97f954e5e2eb89cec6c2b4ae4fb64d84
http://resolver.tudelft.nl/uuid:8206b37c-d300-4f71-92da-a4a9f5fd6daf
http://resolver.tudelft.nl/uuid:8206b37c-d300-4f71-92da-a4a9f5fd6daf
Autor:
Hourdakis E., Theodoropoulou M., Nassiopoulou A. G., Parisini A., Reading M. A., van den Berg J. A., Conard T., Degendt S.
Publikováno v:
ECS transactions 25 (2009): 363–372. doi:10.1149/1.3204426
info:cnr-pdr/source/autori:Hourdakis E.; Theodoropoulou M.; Nassiopoulou A. G.; Parisini A.; Reading M. A.; van den Berg J. A.; Conard T. and Degendt S./titolo:Comparison of Electrical Measurements with Structural Analysis of Thin High-k Hf-Based Dielectric Films on Si/doi:10.1149%2F1.3204426/rivista:ECS transactions/anno:2009/pagina_da:363/pagina_a:372/intervallo_pagine:363–372/volume:25
info:cnr-pdr/source/autori:Hourdakis E.; Theodoropoulou M.; Nassiopoulou A. G.; Parisini A.; Reading M. A.; van den Berg J. A.; Conard T. and Degendt S./titolo:Comparison of Electrical Measurements with Structural Analysis of Thin High-k Hf-Based Dielectric Films on Si/doi:10.1149%2F1.3204426/rivista:ECS transactions/anno:2009/pagina_da:363/pagina_a:372/intervallo_pagine:363–372/volume:25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::6b79f9d3908b2bf2211dd679c2ada699
https://publications.cnr.it/doc/65813
https://publications.cnr.it/doc/65813
Autor:
Mitard, J., Martens, K., DeJaeger, B., Franco, J., Shea, C., Plourde, C., Leys, F.E., Loo, R., Hellings, G., Eneman, G., Wei-E Wang, Lin, J.C., Kaczer, B., DeMeyer, K., Hoffmann, T., DeGendt, S., Caymax, M., Meuris, M., Heyns, M.M.
Publikováno v:
2009 Proceedings of the European Solid State Device Research Conference; 2009, p411-414, 4p
Autor:
Mertens, P.W., Vereecke, G., Vos, R., Arnauts, S., Barbagini, F., Bearda, T., Degendt, S., Demaco, C., Eitoku, A., Frank, M., Fyen, W., Hall, L., Hellin, D., Holsteyns, F., Kesters, E., Claes, M., Kim, K., Kenis, K., Kraus, H., Hoyer, R.
Publikováno v:
2006 International Symposium on VLSI Technology, Systems & Applications; 2006, p1-4, 4p
Autor:
O'Sullivan, B.J., Pantisano, L., Roussel, P., Degraeve, R., Groeseneken, G., DeGendt, S., Heyns, M.
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings; 2006, p365-369, 5p