Initial stages of GaN buffer layer growth on (0001) sapphire by metalorganic chemical vapour deposition

Autor: Degave, F., Ruterana, P., Nouet, G. ^*, Je, J.H., Kim, C.C.

Publikováno v: In Diamond & Related Materials March-June 2002 11(3-6):901-904

Microstructure of GaN nucleation layer during initial stage MOCVD growth

Autor: Kim, C.C., Je, J.H. ^*, Yi, M.S., Noh, D.Y., Degave, F., Ruterana, Pierre

Publikováno v: In Materials Science & Engineering B 2001 82(1):108-110

Lattice mismatch effects between the substrate and GMR La0.7Sr0.3MnO3 thin films studied by scanning probe microscopy and Raman spectroscopy

Autor: Bormann, D., Desfeux, Rachel, Degave, F., Khelifa, B., Hamet, J.F., Wolfman, J.

Publikováno v: physica status solidi (b)
physica status solidi (b), Wiley, 1999, Physica Status Solidi (B) Basic Research, 215 (11), pp.691-695
physica status solidi (b), 1999, Physica Status Solidi (B) Basic Research, 215 (11), pp.691-695

International audience; no abstract

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::40208734927b99b935ef76bc39a5e2a6
https://hal.archives-ouvertes.fr/hal-01681491

Metalorganic Chemical Vapor Deposition Growth of a GaN Epilayer on an Annealed GaN Buffer Layer.

Autor: Degave, F., Ruterana, P., Nouet, G., Je, J.H., Kim, C.C.

Publikováno v: Physica Status Solidi (C); 2003, Vol. 0 Issue 1, p546-549, 4p

Lattice Mismatch Effects between the Substrate and GMR La0.7Sr0.3MnO3 Thin Films Studied by Scanning Probe Microscopy and Raman Spectroscopy.

Autor: Bormann, D., Desfeux, R., Degave, F., Khelifa, B., Hamet, J. F., Wolfman, J.

Publikováno v: Physica Status Solidi (B); Sep1999, Vol. 215 Issue 1, p691-695, 5p