Zobrazeno 1 - 10
of 230
pro vyhledávání: '"Defrance N"'
Autor:
Brezza, E., Deprat, F., de Buttet, C., Gauthier, A., Gregoire, M., Guiheux, D., Guyader, V., Juhel, M., Berbezier, I., Assaf, E., Favre, L., Chevalier, P., Gaquière, C., Defrance, N.
Publikováno v:
In Solid State Electronics June 2023 204
Publikováno v:
In Current Applied Physics December 2017 17(12):1601-1608
Autor:
Lakhdhar, H., Labat, N., Curutchet, A., Defrance, N., Lesecq, M., De Jaeger, J.-C., Malbert, N.
Publikováno v:
In Microelectronics Reliability September 2016 64:594-598
Autor:
Lesecq, Marie, Frayssinet, E., Portail, Marc, Bah, M, Defrance, N., Ngo, T-H., Abou Daher, M., Fouzi, Y., Cordier, Yvon, Abboud, A., de Jaeger, Jean-Claude, Zielinski, M., Alquier, Daniel
Publikováno v:
International Workshop on Nitride Semi-conductors, IWN 2022
International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4254::32c6b8d27edba90de5d56421e40db239
https://hal.science/hal-04037282
https://hal.science/hal-04037282
Akademický článek
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Publikováno v:
2022 Microwave Mediterranean Symposium (MMS)
2022 Microwave Mediterranean Symposium (MMS), May 2022, Pizzo Calabro, Italy. pp.1-2, ⟨10.1109/MMS55062.2022.9825590⟩
2022 Microwave Mediterranean Symposium (MMS), May 2022, Pizzo Calabro, Italy. pp.1-2, ⟨10.1109/MMS55062.2022.9825590⟩
International audience; This work presents an overview of the current state-of-the-art Power Amplifiers and Low-Noise amplifiers in the 40–75 GHz frequency band (i.e., V -band). These RF blocks are critical for the development of future LEO constel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c21e1482cac2d3f4a10c241482a6c45
https://doi.org/10.1109/mms55062.2022.9825590
https://doi.org/10.1109/mms55062.2022.9825590
Autor:
Pitaval, Charles, Lacam, Cédric, Defrance, N., Gaquière, Christophe, Michel, Nicolas, Parillaud, Olivier, Delage, Sylvain
Publikováno v:
physica status solidi (a)
physica status solidi (a), In press, ⟨10.1002/pssa.202200476⟩
physica status solidi (a), In press, ⟨10.1002/pssa.202200476⟩
International audience; The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4254::eeccd9d35933c241478e616aed1a04df
https://hal.science/hal-03875911
https://hal.science/hal-03875911
Publikováno v:
In Diamond & Related Materials 2009 18(5):881-883
Autor:
Malbert, N., Labat, N., Curutchet, A., Sury, C., Hoel, V., de Jaeger, J.-C., Defrance, N., Douvry, Y., Dua, C., Oualli, M., Bru-Chevallier, C., Bluet, J.-M., Chikhaoui, W.
Publikováno v:
In Microelectronics Reliability 2009 49(9):1216-1221
Autor:
Bah, Micka, Valente, Damien, Lesecq, Marie, Defrance, N., Barros, Maxime Garcia, De Jaeger, Jean-Claude, Frayssinet, Eric, Comyn, Remi, Ngo, Thi Huong, Alquier, Daniel, CORDIER, Yvon
Publikováno v:
Wocsdice Exmatec 2021
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
ORAL; International audience; This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance microscopy (SCM) and scanning spreading r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f8a7b27b8f9307f2ff9444b735ef788c
https://hal.archives-ouvertes.fr/hal-03284079/document
https://hal.archives-ouvertes.fr/hal-03284079/document