Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Deepthi Cingu"'
Autor:
Walter Gonçalez Filho, Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, Matthias Marx, Dirk Fahle, Benoit Bakeroot, Stefaan Decoutere
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract This work reports the epitaxial growth of 8.5 µm-thick GaN layers on 200 mm engineered substrates with a polycrystalline AlN core (QST by QROMIS) for CMOS compatible processing of vertical GaN power devices. The epitaxial stack contains a 5
Externí odkaz:
https://doaj.org/article/5ea9232b349f46428755a2c055e14194
Autor:
Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Autor:
Guido Groeseneken, Benoit Bakeroot, Shuzhen You, Nooshin Amirifar, Ming Zhao, Kristof J. P. Jacobs, Deepthi Cingu, Stefaan Decoutere, Xiangdong Li, Karen Geens
Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3635f9fce6a6e8c01ced1ef66dbe5080
https://lirias.kuleuven.be/handle/123456789/683497
https://lirias.kuleuven.be/handle/123456789/683497
Autor:
Gonçalez Filho, Walter1,2 (AUTHOR) filhog97@imec.be, Borga, Matteo1 (AUTHOR), Geens, Karen1 (AUTHOR), Cingu, Deepthi1 (AUTHOR), Chatterjee, Urmimala1 (AUTHOR), Banerjee, Sourish1 (AUTHOR), Vohra, Anurag1 (AUTHOR), Han, Han1 (AUTHOR), Minj, Albert1 (AUTHOR), Hahn, Herwig3 (AUTHOR), Marx, Matthias3 (AUTHOR), Fahle, Dirk3 (AUTHOR), Bakeroot, Benoit1,2 (AUTHOR), Decoutere, Stefaan1 (AUTHOR)
Publikováno v:
Scientific Reports. 9/23/2023, Vol. 13 Issue 1, p1-12. 12p.
Autor:
Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J. P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan
Publikováno v:
IEEE Transactions on Electron Devices; Feb2021, Vol. 68 Issue 2, p645-652, 8p