Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Deepnarayan, Biswas"'
Autor:
Christopher H. Don, Thomas P. Shalvey, Matthew J. Smiles, Luke Thomas, Laurie J. Phillips, Theodore D. C. Hobson, Harry Finch, Leanne A. H. Jones, Jack E. N. Swallow, Nicole Fleck, Christopher Markwell, Pardeep K. Thakur, Tien‐Lin Lee, Deepnarayan Biswas, Leon Bowen, Benjamin A. D. Williamson, David O. Scanlon, Vinod R. Dhanak, Ken Durose, Tim D. Veal, Jonathan D. Major
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 20, Pp n/a-n/a (2023)
Abstract Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter‐diffusion at the interface forming Cd(S,Se) and Sb2(S,Se
Externí odkaz:
https://doaj.org/article/2b30a75e5c3f41c0b67fe73c97d5ef51
Autor:
Paulina Majchrzak, Ryan Muzzio, Alfred J. H. Jones, Davide Curcio, Klara Volckaert, Deepnarayan Biswas, Jacob Gobbo, Simranjeet Singh, Jeremy T. Robinson, Kenji Watanabe, Takashi Taniguchi, Timur K. Kim, Cephise Cacho, Jill A. Miwa, Philip Hofmann, Jyoti Katoch, Søren Ulstrup
Publikováno v:
Small Science, Vol 1, Iss 6, Pp n/a-n/a (2021)
To pinpoint the electronic and structural mechanisms that affect intrinsic and extrinsic performance limits of 2D material devices, it is of critical importance to resolve the electronic properties on the mesoscopic length scale of such devices under
Externí odkaz:
https://doaj.org/article/b2b80a272b5b4543a81c8d3e83f52a10
Autor:
Alfred J. H. Jones, Lene Gammelgaard, Mikkel O. Sauer, Deepnarayan Biswas, Roland J. Koch, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Kenji Watanabe, Takashi Taniguchi, Cory R. Dean, Antti-Pekka Jauho, Peter Bøggild, Thomas G. Pedersen, Bjarke S. Jessen, Søren Ulstrup
Publikováno v:
Jones, A J H, Gammelgaard, L, Sauer, M O, Biswas, D, Koch, R J, Jozwiak, C, Rotenberg, E, Bostwick, A, Watanabe, K, Taniguchi, T, Dean, C R, Jauho, A P, Bøggild, P, Pedersen, T G, Jessen, B S & Ulstrup, S 2022, ' Nanoscale View of Engineered Massive Dirac Quasiparticles in Lithographic Superstructures ', ACS Nano, vol. 16, no. 11, pp. 19354-19362 . https://doi.org/10.1021/acsnano.2c08929
Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconduct
Autor:
Klara Volckaert, Paulina Majchrzak, Deepnarayan Biswas, Alfred J. H. Jones, Marco Bianchi, Zhihao Jiang, Raphaël Dubourg, Rasmus Ørnekoll Stenshøj, Mads Lykke Jensen, Nykola C. Jones, Søren V. Hoffmann, Jian‐Li Mi, Martin Bremholm, Xing‐Chen Pan, Yong P. Chen, Philip Hofmann, Jill A. Miwa, Søren Ulstrup
Publikováno v:
Volckaert, K, Majchrzak, P E, Biswas, D, Jones, A, Bianchi, M, Jiang, Z, Dubourg, R, Jensen, M L, Stenshøj, R Ø, Jones, N C, Hoffmann, S V, Mi, J-L, Bremholm, M, Pan, X C, Chen, Y P, Hofmann, P, Miwa, J & Ulstrup, S 2023, ' Surface electronic structure engineering of manganese bismuth tellurides guided by micro-focused angle-resolved photoemission ', Advanced Materials . https://doi.org/10.1002/adma.202301907
Modification of the electronic structure of quantum matter by ad atom deposition allows for directed fundamental design of electronic and magnetic properties. This concept is utilized in the present work in order to tune the surface electronic struct
Autor:
Klara Volckaert, Byoung Ki Choi, Hyuk Jin Kim, Deepnarayan Biswas, Denny Puntel, Simone Peli, Fulvio Parmigiani, Federico Cilento, Young Jun Chang, Søren Ulstrup
Publikováno v:
Volckaert, K, Choi, B K, Kim, H J, Biswas, D, Puntel, D, Peli, S, Parmigiani, F, Cilento, F, Chang, Y J & Ulstrup, S 2023, ' External screening and lifetime of exciton population in single-layer ReSe2 probed by time-and angle-resolved photoemission spectroscopy ', Physical Review Materials, vol. 7, no. 4, L041001 . https://doi.org/10.1103/PhysRevMaterials.7.L041001
The semiconductor ReSe$_2$ is characterized by a strongly anisotropic optical absorption and is therefore promising as an optically active component in two-dimensional heterostructures. However, the underlying femtosecond dynamics of photoinduced exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f03ba8f6dd463b31f14cff21d335aa62
https://pure.au.dk/portal/da/publications/external-screening-and-lifetime-of-exciton-population-in-singlelayer-rese2-probed-by-time-and-angleresolved-photoemission-spectroscopy(92c46815-ce93-4d01-9d29-8ac0430b1e3b).html
https://pure.au.dk/portal/da/publications/external-screening-and-lifetime-of-exciton-population-in-singlelayer-rese2-probed-by-time-and-angleresolved-photoemission-spectroscopy(92c46815-ce93-4d01-9d29-8ac0430b1e3b).html
Autor:
Kate Reidy, Paulina Ewa Majchrzak, Benedikt Haas, Joachim Dahl Thomsen, Andrea Konečná, Eugene Park, Julian Klein, Alfred J. H. Jones, Klara Volckaert, Deepnarayan Biswas, Matthew D. Watson, Cephise Cacho, Prineha Narang, Christoph T. Koch, Søren Ulstrup, Frances M. Ross, Juan Carlos Idrobo
Publikováno v:
Reidy, K, Majchrzak, P E, Haas, B, Thomsen, J D, Konečná, A, Park, E, Klein, J, Jones, A J H, Volckaert, K, Biswas, D, Watson, M D, Cacho, C, Narang, P, Koch, C T, Ulstrup, S, Ross, F M & Idrobo, J C 2023, ' Direct Visualization of Subnanometer Variations in the Excitonic Spectra of 2D/3D Semiconductor/Metal Heterostructures ', Nano Letters, vol. 23, no. 3, pp. 1068-1076 . https://doi.org/10.1021/acs.nanolett.2c04749
The integration of metallic contacts with two-dimensional (2D) semiconductors is routinely required for the fabrication of nanoscale devices. However, nanometer-scale variations in the 2D/metal interface can drastically alter the local optoelectronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4feca3a24f52129762ffeb3c5efe9ee
https://pure.au.dk/portal/da/publications/direct-visualization-of-subnanometer-variations-in-the-excitonic-spectra-of-2d3d-semiconductormetal-heterostructures(ee4bca49-531b-4648-83a2-ae67387e41ea).html
https://pure.au.dk/portal/da/publications/direct-visualization-of-subnanometer-variations-in-the-excitonic-spectra-of-2d3d-semiconductormetal-heterostructures(ee4bca49-531b-4648-83a2-ae67387e41ea).html
Autor:
Paulina Ewa Majchrzak, Yuntian Liu, Klara Volckaert, Deepnarayan Biswas, Chakradhar Sahoo, Denny Puntel, Wibke Bronsch, Manuel Tuniz, Federico Cilento, Xing-Chen Pan, Qihang Liu, Yong P. Chen, Søren Ulstrup
Publikováno v:
Majchrzak, P E, Liu, Y, Volckaert, K, Biswas, D, Sahoo, C, Puntel, D, Bronsch, W, Tuniz, M, Cilento, F, Pan, X C, Liu, Q, Chen, Y P & Ulstrup, S 2023, ' Van der Waals Engineering of Ultrafast Carrier Dynamics in Magnetic Heterostructures ', Nano Letters, vol. 23, no. 2, pp. 414-421 . https://doi.org/10.1021/acs.nanolett.2c03075
Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d02d61cf998e242dab9f9b3b7af9862
https://hdl.handle.net/11368/3041618
https://hdl.handle.net/11368/3041618
Autor:
Jeppe V. Lauritsen, Adam S. Wyatt, Maciej Dendzik, Oliver Alexander, Klara Volckaert, Daniel Lizzit, Sanjoy K. Mahatha, Igor Marković, Phil D. C. King, Luca Bignardi, Philip Hofmann, Dan Matselyukh, Charlotte E. Sanders, Søren Ulstrup, Federico Andreatta, Cephise Cacho, Signe S. Grønborg, J. M. Riley, Paulina Majchrzak, Jens Christian Johannsen, Deepnarayan Biswas, Antonija Grubišić Čabo, Emma Springate, Silvano Lizzit, Richard T. Chapman, Marco Bianchi, Jill A. Miwa
Publikováno v:
Majchrzak, P, Volckaert, K, Čabo, A G, Biswas, D, Bianchi, M, Mahatha, S K, Dendzik, M, Andreatta, F, Grønborg, S S, Marković, I, Riley, J M, Johannsen, J C, Lizzit, D, Bignardi, L, Lizzit, S, Cacho, C, Alexander, O, Matselyukh, D, Wyatt, A S, Chapman, R T, Springate, E, Lauritsen, J V, King, P D C, Sanders, C E, Miwa, J A, Hofmann, P & Ulstrup, S 2021, ' Spectroscopic view of ultrafast charge carrier dynamics in single-and bilayer transition metal dichalcogenide semiconductors ', Journal of Electron Spectroscopy and Related Phenomena, vol. 250, 147093 . https://doi.org/10.1016/j.elspec.2021.147093
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d18f5ab45b25656ed489ed8941770d3
https://pure.au.dk/portal/da/publications/spectroscopic-view-of-ultrafast-charge-carrier-dynamics-in-single-and-bilayer-transition-metal-dichalcogenide-semiconductors(57b6fcc6-a6d3-4f4a-ad33-d52ac32297ac).html
https://pure.au.dk/portal/da/publications/spectroscopic-view-of-ultrafast-charge-carrier-dynamics-in-single-and-bilayer-transition-metal-dichalcogenide-semiconductors(57b6fcc6-a6d3-4f4a-ad33-d52ac32297ac).html
Autor:
Klara Volckaert, Gabriel Karras, Raman Sankar, Alfred J. H. Jones, Eli Rotenberg, Paulina Majchrzak, Young Jun Chang, Aaron Bostwick, Igor Marković, Charlotte E. Sanders, Philip Hofmann, Yu Zhang, Søren Ulstrup, Federico Andreatta, Deepnarayan Biswas, Emma Springate, Nicola Lanatà, Chris Jozwiak, Adam S. Wyatt, Richard T. Chapman, Sahar Pakdel, Phil D. C. King, Jill A. Miwa
Publikováno v:
Physical Review B. 103
Funding: We gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant. No.15375) and the Centre of Excellence for Dirac Materials (Grant. No. 11744), the Danish Council for Independent Research, Natural Sciences
Autor:
Milan K. Sanyal, Sangeeta Thakur, Khadiza Ali, Arka Bikash Dey, Kalobaran Maiti, Swapnil Patil, Deepnarayan Biswas
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 33(42)
We investigate the properties of excitons in the SiGe inverted quantum huts (IQHs) embedded in Si employing high-resolution x-ray photoemission spectroscopy. Ultra-small Si/Ge IQHs (13.3 nm × 6.6 nm) were grown on a Si buffer layer deposited on a Si