Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Deepak Prasai"'
Autor:
Sylvia Hagedorn, Günther Tränkle, Simon Fleischmann, Eberhard Richter, Deepak Prasai, Markus Weyers, Ralph-Stephan Unger, Jonas Weinrich, Anna Mogilatenko
Publikováno v:
Semiconductor Science and Technology. 35:035028
Lateral overgrowth of patterned c-plane oriented sapphire substrates (PSS) with AlGaN using hydride vapor phase epitaxy was investigated with focus on how to suppress parasitic non c-planar crystallite nucleation and propagation. To this end, trigona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e612549aa886ca297e476ebb09d22871
https://doi.org/10.1088/1361-6641/ab7148
https://doi.org/10.1088/1361-6641/ab7148
Autor:
Johannes Glaab, Sven Einfeldt, Jan Ruschel, Sylvia Hagedorn, Arne Knauer, Christoph Stoelmacker, Michael Kneissl, Ina Ostermay, Katrin Hilbrich, Tim Kolbe, O. Krueger, Anna Andrle, Deepak Prasai, Maria Reiner, A. Thies, S. Knigge, Markus Weyers, Jens Rass, Neysha Lobo Ploch, Hyun Kyong Cho
Publikováno v:
Gallium Nitride Materials and Devices XIII.
The development of efficient (In)AlGaN light emitting diodes (LEDs) in the ultraviolet B (UVB) spectral region (280nm-320nm) is essential due to their vast commercial potential. UVB LEDs are expected to not only replace traditional mercury lamps in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fed9a63ae1fdc87fab57ae64da2b7d5
https://doi.org/10.1117/12.2287131
https://doi.org/10.1117/12.2287131
Autor:
Olaf Krüger, Wilfred John, Francis Edokam, Markus Weyers, Deepak Prasai, Ute Zeimer, Frank Brunner
Publikováno v:
physica status solidi (b). 252:1189-1194
This report describes the successful realization of high-quality semi-polar -GaN templates grown on 100 mm diameter r-plane patterned sapphire. Trench patterning is accomplished by plasma etching using a slanted SiNx mask that is formed by a resist-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4df7b7808c5cf468e335852e00898a5
https://doi.org/10.1002/pssb.201552054
https://doi.org/10.1002/pssb.201552054
Autor:
Wilfred John, Deepak Prasai, Markus Weyers, D. Goran, Günther Tränkle, Sylvia Hagedorn, Simon Fleischmann, Anna Mogilatenko, Eberhard Richter, Ute Zeimer
Publikováno v:
Journal of Electronic Materials. 43:814-818
Growth of AlxGa1−xN layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their orientation and size promote the formation of coalesced c-plane-oriented AlxGa1−xN layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88f7c4ba683afa9de24afd4fe0f5622
https://doi.org/10.1007/s11664-013-2871-x
https://doi.org/10.1007/s11664-013-2871-x
Autor:
Olaf Krüger, Martin Wienold, Deepak Prasai, Klaus Biermann, W. Pittroff, Rajesh Sharma, Leonhard Dr. Weixelbaum, Götz Erbert, Frank Schnieder, Holger T. Grahn, S. Kreutzmann, Günther Tränkle, Wilfred John, Lutz Schrottke
Publikováno v:
IEEE Photonics Technology Letters. 25:1570-1573
First results on epitaxial-side (epi-down) mounting of terahertz quantum-cascade lasers (QCLs) on sapphire submounts using indium solder are presented. The single-plasmon ridge waveguide lasers emit in the range 3.1–3.3 THz. An epi-down mounting sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65628efe835d396eb4407939fec58b0c
https://doi.org/10.1109/lpt.2013.2271323
https://doi.org/10.1109/lpt.2013.2271323
Publikováno v:
Journal of Crystal Growth. 353:129-133
The growth of Al 0.45 Ga 0.55 N layers of 5 μm thickness on planar and trench patterned (0001) sapphire substrates by hydride vapour phase epitaxy (HVPE) is investigated. The introduction of an AlN buffer layer prior to the planar growth of the Al 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18be74a04d8918bb394f06c4782adfd
https://doi.org/10.1016/j.jcrysgro.2012.05.028
https://doi.org/10.1016/j.jcrysgro.2012.05.028
Autor:
Anna Mogilatenko, Eberhard Richter, Ralph-Stephan Unger, Deepak Prasai, Simon Fleischmann, Markus Weyers, Günther Tränkle
Publikováno v:
physica status solidi (a). 214:1600751
AlGaN growth by hydride vapor phase epitaxy on patterned sapphire substrates has been investigated. Growth on honeycomb-shaped holes is disturbed by parasitic growth of c-plane oriented AlGaN crystallites on n-plane sapphire facets. Triangular hole-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4782666b1ad65cb5814d5af3a9ab40e7
https://doi.org/10.1002/pssa.201600751
https://doi.org/10.1002/pssa.201600751
Autor:
Sascha Kalusniak, Alexander S. Kuznetsov, Sergey Sadofev, Peter Schäfer, Deepak Prasai, Wilfred John
Publikováno v:
Nanotechnology. 27:02LT02
We demonstrate a proof-of-concept refractive index sensor based on heavily doped ZnO:Ga nanostructured in a grating configuration, which supports free space excitation of propagating surface plasmons. The bulk sensitivity of the sensor of 4.9 × 10(3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4abbd55c9abb5fa3ee9b0461dd77e763
https://doi.org/10.1088/0957-4484/27/2/02lt02
https://doi.org/10.1088/0957-4484/27/2/02lt02
Autor:
Simon Fleischmann, Sylvia Hagedorn, Anna Mogilatenko, Jonas Weinrich, Deepak Prasai, Eberhard Richter, Ralph-Stephan Unger, Markus Weyers, Günther Tränkle
Publikováno v:
Semiconductor Science & Technology; Mar2020, Vol. 35 Issue 3, p1-1, 1p
Autor:
Alexander S Kuznetsov, Peter Schäfer, Wilfred John, Deepak Prasai, Sergey Sadofev, Sascha Kalusniak
Publikováno v:
Nanotechnology; 1/15/2016, Vol. 27 Issue 2, p1-1, 1p