Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Deepak Anandan"'
Autor:
Deepak Anandan, 狄帕
107
Owing to the unique material and physical properties, III-V nanowires have been attractive extensively as a promising candidate for realizing future electronic and optoelectronic applications. In this thesis, synthesis and characterization o
Owing to the unique material and physical properties, III-V nanowires have been attractive extensively as a promising candidate for realizing future electronic and optoelectronic applications. In this thesis, synthesis and characterization o
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/wxfwcr
Publikováno v:
Materials Science Forum. 1055:1-6
Integration of low bandgap antimonide based nanowires on Si substrate has been attracting huge attention for opto-electronic applications. In this work we demonstrated InAs/InSb and InAs/GaSb heterostructure nanowires on Si substrate by metal organic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb71d3a6190c148959b2ea341435b32c
https://doi.org/10.4028/p-y19917
https://doi.org/10.4028/p-y19917
Publikováno v:
Characteristics and Applications of Boron ISBN: 9781803564647
Characteristics and Applications of Boron
Characteristics and Applications of Boron
The III-nitride semiconductors are known for their excellent extrinsic properties like direct bandgap, low electron affinity, and chemical and thermal stability. Among III-nitride semiconductors, boron nitride has proven to be a favorable candidate f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42974c065bc74aa5c0154abd4568f425
https://doi.org/10.5772/intechopen.106675
https://doi.org/10.5772/intechopen.106675
Publikováno v:
Light-Emitting Diodes-New Perspectives
Light-Emitting Diodes-New Perspectives ISBN: 9781803565606
Light-Emitting Diodes-New Perspectives ISBN: 9781803565606
Gallium nitride (GaN)-based solid state lighting technology has revolutionized the semiconductor industry. The GaN technology has played a crucial role in reducing world energy demand as well as reducing the carbon footprint. As per the reports, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e69100bd05a33553133bb85a9bbed88d
https://mts.intechopen.com/articles/show/title/recent-advancements-in-gan-led-technology
https://mts.intechopen.com/articles/show/title/recent-advancements-in-gan-led-technology
Autor:
H. Bijo Joseph, Ankur Gupta, Venkatesan Nagarajan, Deepak Anandan, D. John Thiruvadigal, Ramesh Kumar Kakkerla, Sankalp Kumar Singh, Hung Wei Yu, Edward Yi Chang
Publikováno v:
Materials Science in Semiconductor Processing. 101:247-252
The performance of InAs/GaSb core-shell nanowire TFET is systematically investigated for the effects of intrinsic device parameters such as channel doping, shell thickness, spacer length and source offset. Device ON-current (ION) was chosen as the ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb343d612127a1c16176b833fb08072
https://doi.org/10.1016/j.mssp.2019.06.004
https://doi.org/10.1016/j.mssp.2019.06.004
Autor:
Deepak Anandan, Ching-Ting Lee, Hua Lun Ko, Ramesh Kumar Kakkerla, Edward Yi Chang, Sankalp Kumar Singh, Hung Wei Yu, Venkatesan Nagarajan
Publikováno v:
Journal of Crystal Growth. 522:30-36
In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d21ed97d254c90473bf379e318b6b5f
https://doi.org/10.1016/j.jcrysgro.2019.06.016
https://doi.org/10.1016/j.jcrysgro.2019.06.016
Autor:
Deepak Anandan, Edward Yi Chang, Yueh Chin Lin, Kun-Ming Chen, Sankalp Kumar Singh, Huan Chung Wang, Venkatesan Nagarajan
Publikováno v:
Microelectronics Journal. 87:51-54
A simple technique for extracting the bias-dependent parasitic series resistances of the GaN-based high electron mobility transistor (HEMT) is demonstrated in this paper. With considering the non-quasi-static effect in devices, new analytical Z-param
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bdd0f41f727acbb0fac4582c829e3bd
https://doi.org/10.1016/j.mejo.2019.03.016
https://doi.org/10.1016/j.mejo.2019.03.016
Autor:
Deepak Anandan, Hua Lun Ko, Ching-Ting Lee, Ramesh Kumar Kakkerla, Sankalp Kumar Singh, Hung Wei Yu, Edward Yi Chang, Venkatesan Nagarajan
Publikováno v:
Journal of Crystal Growth. 506:45-54
In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1 1 1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35b093bca4252a0b3c14ae29888d311
https://doi.org/10.1016/j.jcrysgro.2018.09.046
https://doi.org/10.1016/j.jcrysgro.2018.09.046
Autor:
Le Trung Hieu, Chung-Han Chiang, Deepak Anandan, Chang-Fu Dee, Azrul Azlan Hamzah, Ching-Ting Lee, Chung-Hsiung Lin, Edward Yi Chang
Publikováno v:
Semiconductor Science and Technology. 37:075012
AlGaN/GaN high electron mobility transistors (HEMTs) heterostructures are grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate and high-resistivity silicon (HR-Si) simultaneously to investigate the influence of sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f4b4ba77141d926facef7d205a5ea33
https://doi.org/10.1088/1361-6641/ac71c0
https://doi.org/10.1088/1361-6641/ac71c0
Autor:
Edward Yi Chang, Hua Lun Ko, Sankalp Kumar Singh, Hung Wei Yu, Deepak Anandan, Venkatesan Nagarajan
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we report selective area epitaxy (SAE) of InGaAs/InAs heterostructure (HS) on Si (111) using m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51352688c15d411d2b38e63aa0f2f86a
https://doi.org/10.1109/vlsi-tsa51926.2021.9440134
https://doi.org/10.1109/vlsi-tsa51926.2021.9440134