Zobrazeno 1 - 10
of 191
pro vyhledávání: '"Dedong Han"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 10-13 (2021)
In the present work, we testify a strategy to achieve high-performance ZnO thin film transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more than 100 °C. Interestingly, the ZnO TFTs exhibit superior electrical propert
Externí odkaz:
https://doaj.org/article/8d674bdc2c334856b36b3f117aacc228
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1896 (2022)
Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays. In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A comparison study is conducted on the electrical properties
Externí odkaz:
https://doaj.org/article/63ab67987ff348cf92398e53ad5d3dc0
Autor:
Wen Yu, Dongyan Zhao, Jian Cai, Yubo Wang, Haifeng Zhang, Yanning Chen, Yidong Yuan, Zhen Fu, Shuaipeng Wang, Tiantian Wei, Yi Wang, Dedong Han
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1302-1305 (2019)
In order to explore the influence of interlayer between dielectric layer and channel layer on performance of thin film transistors (TFTs), the single layer titanium doped zinc oxide (TiZO) TFTs and the dual layer indium tin oxide (ITO)/TiZO TFTs were
Externí odkaz:
https://doaj.org/article/4133657373e44660bf73c71095d28e0e
Publikováno v:
Nanomaterials, Vol 12, Iss 7, p 1167 (2022)
Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties wer
Externí odkaz:
https://doaj.org/article/e3e66365f5a64fb4bf6ee6eedde71b0e
Publikováno v:
Nanomaterials, Vol 12, Iss 1, p 172 (2022)
Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD
Externí odkaz:
https://doaj.org/article/43ac685ae4514e11bc0b7cff46f3bb7c
Publikováno v:
Membranes, Vol 11, Iss 12, p 929 (2021)
InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher th
Externí odkaz:
https://doaj.org/article/8f787a1c557648188002998ce9564b56
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Abstract In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as
Externí odkaz:
https://doaj.org/article/21ba9d2dccb940cdbc9ab7c0bc98475c
Publikováno v:
The Journal of Engineering (2018)
The performance of non-linear absorbers for suppression of the structure vibrations depends on the setting of the absorbers' parameters to a certain extent. A slowly varying dynamical system under investigation in the existing work is comprised of a
Externí odkaz:
https://doaj.org/article/750e6f8ff6f14e488b51d594ccfb46eb
Publikováno v:
Advances in Condensed Matter Physics, Vol 2015 (2015)
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices
Externí odkaz:
https://doaj.org/article/34e90be1cf324d85982045db959e5fc2
Publikováno v:
IEEE Electron Device Letters. 43:1251-1254
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5148c3105cc879f6289aa91a0cd02c7f
https://doi.org/10.1109/led.2022.3185099
https://doi.org/10.1109/led.2022.3185099