Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Debra-Ann Klug"'
Autor:
C. Michael Greenlief, Debra-Ann Klug
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1826-1831
The adsorption and decomposition of ethylbromide on the Si(100) and Si(111) surfaces is investigated. Ethylbromide adsorbs molecularly on Si at surface temperatures below 110 K. Warming the ethylbromide‐covered surface above 200 K results in the cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::343d452f41e3725123fc8d31d049cd31
https://doi.org/10.1116/1.580344
https://doi.org/10.1116/1.580344
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:2067-2072
The adsorption and decomposition of digermane, Ge2H6, on the Si(100)‐(2×1) surface has been investigated with the intent of elucidating the surface processes leading to the deposition of epitaxial Ge thin films from gaseous Ge‐containing sources
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd125a6d2ac3abb4333e6ab77830aa18
https://doi.org/10.1116/1.578411
https://doi.org/10.1116/1.578411
Publikováno v:
Chemical Physics Letters. 197:352-357
The low-temperature adsorption and decomposition of digermane on Si(100) has been investigated by ultraviolet photoelectron spectroscopy. Exposure of Ge 2 H 6 to Si(100) at 110 K results in molecular adsorption and ab initio calculations of gas phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e2e8fcf790eedf2a4fe3e78705182fb
https://doi.org/10.1016/0009-2614(92)85784-8
https://doi.org/10.1016/0009-2614(92)85784-8
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2465-2469
The adsorption and decomposition of germane GeH4 and digermane Ge2H6 on Si(100) have been investigated. Exposure of GeH4 to Si(100) at 110 K results in dissociative chemisorption to GeH3 and H. The adsorption of GeH4 is via a precursor state. Heating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8839acf393c88b876546b069c9837d17
https://doi.org/10.1116/1.577985
https://doi.org/10.1116/1.577985
Publikováno v:
MRS Proceedings. 282
The adsorption and decomposition of several Ge-containing compounds on Si(100) have been investigated with the intent of elucidating the surface processes leading to the deposition of epitaxial Ge films from these gaseous sources. Exposure of digerma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e4cb1eacfa7e4a082628e5e96365d76
https://doi.org/10.1557/proc-282-427
https://doi.org/10.1557/proc-282-427
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