Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Debra Fenzel-Alexander"'
Autor:
Gregory Breyta, R. Sooriyakumaran, Carl E. Larson, Qinghuang Lin, Karen Petrillo, Marie Angelopoulos, Juliann Opitz, Gregory M. Wallraff, D. LaTulip, Katherina Babich, John P. Simons, R. A. Dipietro, Mark H. Sherwood, Donald C. Hofer, Debra Fenzel-Alexander, J. Muete
Publikováno v:
Journal of Photopolymer Science and Technology. 11:673-679
Thin film imaging resists (TSI and Bilayer systems) confine the imaging to a thin resist film (in the case of a bilayer system) which is subsequently transferred to a thicker polymeric underlayer. This approach has a number of potential advantages in
Publikováno v:
Journal of Photopolymer Science and Technology. 10:397-407
This paper describes the dissolution behavior of phenolic resins and resists in aqueous base solutions as measured with a quartz crystal microbalance. The dissolution kinetics of poly(4-hydroxystyrene) is linear with time, irrespective of molecular w
Autor:
Debra Fenzel-Alexander, Don Hofer, Hiroshi Ito, Greg Breyta, Pete Hagerty, R. A. Dipietro, Ron Nunes, Will Conley, Jim Thackeray, S. Holmes
Publikováno v:
Journal of Photopolymer Science and Technology. 9:557-572
A production-worthy deep UV resist system built on the ESCAP platform is described. The resist consists of a thermally and hydrolytically stable resin and acid generator and thus can be heated at high temperatures forfree volume reduction, which prov
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 29:1559-1565
Autor:
Gregory M. Wallraff, Robert D. Allen, Debra Fenzel-Alexander, Nicolette Fender, Ratnam Sooriyakumaran
Publikováno v:
SPIE Proceedings.
We have designed and developed an aqueous base soluble polymer system with a silsequioxane (SSQ) backbone for 157nm bilayer resist applications. These base resins have absorbances as low as 0.6micrometers -1 at 157nm. The imagable polymers which cont
Autor:
Carl E. Larson, Richard A. Di Pietro, Phillip J. Brock, Marie Angelopoulos, Dan J. Dawson, Ratnam Sooriyakumaran, Arpan P. Mahorowala, Donald C. Hofer, Debra Fenzel-Alexander, Gregory M. Wallraff
Publikováno v:
Advances in Resist Technology and Processing XVII.
We have designed and developed a high resolution 193 nm bilayer resist system based on alternating copolymers of silane substituted norbornene and maleic anhydride. We have utilized a combination of acid labile silane functionalities and acid stable
Autor:
Gregory Breyta, Marie Angelopoulos, Carl E. Larson, Ratnam Sooriyakumaran, Donald C. Hofer, Karen Petrillo, Phillip J. Brock, Douglas Charles Latulipe, Katherina Babich, Arpan P. Mahorowala, Debra Fenzel-Alexander, John P. Simons, David R. Medeiros, Gregory M. Wallraff, Qinghuang Lin, Richard A. Di Pietro
Publikováno v:
SPIE Proceedings.
Bilayer thin film imaging is one approach to extend 248 nm optical lithography to 150 nm regime and beyond. In this paper, we report our progress in the development of a positive-tone bilayer resist system consisting of a thin silicon containing imag
Autor:
Qinghuang Lin, Carl E. Larson, Douglas C. LaTulip, Debra Fenzel-Alexander, Marie Angelopoulos, Ahmad D. Katnani, Karen Petrillo, Richard A. Di Pietro, Gregory M. Wallraff, Donald C. Hofer, Juliann Opitz, John P. Simons, Katherina Babich, Ratnam Sooriyakumaran
Publikováno v:
SPIE Proceedings.
We have designed and developed new silicon containing methacrylate monomers that can be used in bilayer resist systems. New monomers were developed because the commercially available silicon monomers were found to be unsuitable for our applications.
Publikováno v:
Advances in Resist Technology and Processing XIV.
In this paper, experimental formulations of ESCAP photoresist with two different photoacid generators (PAG) are compared for x-ray and DUV (248 nm) exposures. Sensitivities, chemical contrasts and development selectivities have been derived from diss
Publikováno v:
Advances in Resist Technology and Processing XIV.
The thin film dissolution behavior of phenolic resins such as poly(4-hydroxystyrene) and poly(4-hydroxystyrene-co-t-butyl acrylate), the dissolution inhibition effect of acid generators, and the development kinetics of the ESCAP resist are reported.