Výsledky vyhledávání - "Deborah J. Riley"

Formation of pre-silicide layers below Ni1−xPtxSi/Si interfaces

Autor: Christopher L. Hinkle, K. van Benthem, James Walter Blatchford, Eric M. Vogel, Timothy J. Pennycook, Weidong Luo, J. B. Shaw, Amitabh Jain, Andrew M. Thron, Deborah J. Riley, Jack Chan

Publikováno v: Acta materialia

The formation of a pre-silicide layer below Ni1-xPtxSi films is reported with structure and composition distinctly different from previously observed diffusion layers. It was found that during two-step rapid thermal annealing Ni interstitial diffusio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e74230d1a7e0f8ed366ec6bc5234c30e
https://doi.org/10.1016/j.actamat.2013.01.022

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Layout Variation Effects in Advanced MOSFETs: STI-Induced Embedded SiGe Strain Relaxation and Dual-Stress-Liner Boundary Proximity Effect

Autor: Jayhoon Chung, Youn Sung Choi, Greg C. Baldwin, G Lian, Oluwamuyiwa Oluwagbemiga Olubuyide, Catherine Vartuli, Deborah J. Riley

Publikováno v: IEEE Transactions on Electron Devices. 57:2886-2891

This paper reports two areas of focus for layout variation effects in advanced strained-Si technology: 1) shallow-trench isolation (STI)-induced embedded SiGe (eSiGe) strain relaxation and 2) impact of dual-stress-liner (DSL) boundary on channel mobi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dba4280e927c907ae0095852df3d6ccc
https://doi.org/10.1109/ted.2010.2066567

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Material Loss Impact on Device Performance for 32nm CMOS and Beyond

Autor: Xin Wang, James J. Chambers, Deborah J. Riley, Steven L. Prins, Wei Ze Xiong, Brian K. Kirkpatrick

Publikováno v: Solid State Phenomena. :245-248

As semiconductor technology moves past the 32nm CMOS node, material loss becomes an ever more important topic. Besides impacting the size of physical features, material loss impacts electrical results, process control, and defectivity. The challenge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::90d94fd42cc7a7a75f5d05e1523ddeaa
https://doi.org/10.4028/www.scientific.net/ssp.145-146.245

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Selective Epitaxial Phosphorus-Doped SiGe Layers for Short-Channel Effect Reduction

Autor: Ramachandran Balasubramanian, Satheesh Kuppurao, Amitabh Jain, Deborah J. Riley, Jeongwon Park, Harpreet Juneja

Publikováno v: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Epitaxially grown silicon germanium layers are utilized in very high performance short channel MOSFETs. To reduce short-channel effects, the substrate doping concentration must be increased at the edges of the source and drain. These regions commonly

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9373ba7c4a6e955474fccf5ba8a96e2
https://doi.org/10.1109/istdm.2012.6222452

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Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation

Autor: R. A. Chapman, Kwan-Yong Lim, Amitabh Jain, Christopher L. Hinkle, J. B. Shaw, Javier Mendez, Deborah J. Riley, Eric M. Vogel, Jack Chan, James Walter Blatchford, Seung-Chul Song

Publikováno v: 2012 12th International Workshop on Junction Technology.

Contact resistance (R c ) contributes over 65% of the total source to drain series resistance in < 32 nm CMOS technologies. In this work, reduction of R c is achieved by lowering the SBH through the incorporation of new materials into NiPtSi. The imp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::97cba6f9044b1ebc0402778354cc239c
https://doi.org/10.1109/iwjt.2012.6212840

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Mechanisms of Particle Deposition from Ultrapure Chemicals onto Semiconductor Wafers: Deposition from a Thin Film of Drying Rinse Water

Autor: Deborah J. Riley, Ruben G. Carbonell

Publikováno v: Journal of Colloid and Interface Science. 158:274-288

A film entrainment mechanism which contributes to particulate contamination levels on hydrophilic wafers has been explored. Experimental evidence for the existence of such a mechanism is presented, then an analysis is provided which allows estimation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb782f14d2c818b07d720b3cf8b847b4
https://doi.org/10.1006/jcis.1993.1258

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Mechanisms of Particle Deposition from Ultrapure Chemicals onto Semiconductor Wafers: Deposition from Bulk Liquid during Wafer Submersion

Autor: Ruben G. Carbonell, Deborah J. Riley

Publikováno v: Journal of Colloid and Interface Science. 158:259-273

The liquid-based deposition of inorganic particles onto semiconductor silicon wafers with a native oxide layer has been investigated experimentally by exposing wafers to a variety of sample contaminants in stirred aqueous solutions. Test results clea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36f3c1b9e59444aa49f3be41f65fc9f8
https://doi.org/10.1006/jcis.1993.1257

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2D design rule and layout analysis using novel large-area first-principles-based simulation flow incorporating lithographic and stress effects

Autor: Qi-Zhong Hong, Oluwamuyiwa Oluwagbemiga Olubuyide, James Walter Blatchford, Li Lin, Ricardo Borges, Steven L. Prins, T. S. Kim, Deborah J. Riley, Simon Chang

Publikováno v: SPIE Proceedings.

As design rules and corresponding logic standard cell layouts continue to shrink node-on-node in accordance with Moore's law, complex 2D interactions, both intra-cell and between cells, become much more prominent. For example, in lithography, lack of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb495412ea5ac987bfae30e49a5e1d31
https://doi.org/10.1117/12.814947

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