Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Deborah A. Neumayer"'
Autor:
Leathen Shi, Guy M. Cohen, Sarunya Bangsaruntip, Shimon Levi, Deborah A. Neumayer, Alfred Grill, Konstantin Chirko, Ofer Adan
Publikováno v:
SPIE Proceedings.
For Gate-all-around (GAA) MOSFETs the nanowires are suspended between source and drain anchors allowing conformal deposition of the gate around (i.e., GAASiNW) the silicon nanowire channel. 3DSEM measurement show that silicon wires tend to buckle bet
Autor:
Joerg Appenzeller, D.V. Singh, Deborah A. Neumayer, Keith A. Jenkins, Alfred Grill, Hon-Sum Philip Wong
Publikováno v:
IEEE Transactions On Nanotechnology. 3:383-387
The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain measurements. A high input impedance measurement system was used to demonstrate time-domai
Autor:
Deborah A. Neumayer, Alfred Grill
Publikováno v:
Journal of Applied Physics. 94:6697-6707
Carbon doped oxide dielectrics comprised of Si, C, O, and H (SiCOH) have been prepared by plasma enhanced chemical vapor deposition (PECVD) from mixtures of tetramethylcyclotetrasiloxane (TMCTS) and an organic precursor. The films have been analyzed
Autor:
Guy M. Cohen, Alfred Grill, Ofer Adan, Sarunya Bangsaruntip, Deborah A. Neumayer, Shimon Levi, Maayan Bar Tzi, Ori Shoval, Amiad Conley, Leathen Shi, Yakov Weinberg
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
In this work, we report a new fabrication method of Si nanowires that enables an accurate control of the suspension gap underneath the Si wire. It is achieved by using SOI wafers with an embedded boron nitride (BN) etch-stop layer. Physical character
Publikováno v:
Journal of Applied Physics. 90:4587-4608
The high dielectric constant of insulators currently investigated as alternatives to SiO2 in metal–oxide–semiconductor structures is due to their large ionic polarizability. This is usually accompanied by the presence of soft optical phonons. We
Publikováno v:
Integrated Ferroelectrics. 39:61-71
The volatility of bismuth (Bi) presents difficulty in the integration of ferroelectric strontium bismuth tantalate (SrBi2Ta2O9 or SBT) thin films for FeRAM applications. This paper presents preliminary results indicating that the Bi volatility proble
Publikováno v:
Journal of Materials Research. 15:961-966
High-epsilon (HE) and ferroelectric (FE) perovskites such as (Ba, Sr)TiO3 and SrBi2Ta2O9 are attracting substantial interest for use in dynamic random-access memory and nonvolatile memory. In this paper, we describe how an easily decomposable PdO bot
Autor:
Ioannis Kymissis, Sampath Purushothaman, Christos D. Dimitrakopoulos, P. R. Duncombe, Deborah A. Neumayer, Robert B. Laibowitz
Publikováno v:
Advanced Materials. 11:1372-1375
Publikováno v:
Integrated Ferroelectrics. 25:287-297
Strontium bismuth tantalate (SrBi2.2Ta2O9, SBT) thin films with 1, 3, and 8% zirconium content were prepared on Pt/SiO2/Si substrates by chemical solution deposition using a butoxyethanol/ethylhexanoate chemistry. SIMS analysis revealed a uniform dis
Autor:
Deborah A. Neumayer, Thomas M. Shaw, Alfred Grill, Lisa Berndt, Robert B. Laibowitz, Charles T. Black, P. R. Duncombe
Publikováno v:
Integrated Ferroelectrics. 25:275-286
Multilayers of strontium bismuth tantalate (Sr0.9Bi2.2Ta2O9, SBT) with bismuth titanate (Bi4Ti3O12, BT), and SBT and strontium bismuth niobate (Sr0.9Bi2.2Nb2O9, SBN) with BT were prepared by chemical solution deposition (CSD). The CSD solutions were