Zobrazeno 1 - 10
of 797
pro vyhledávání: '"Debarre, D."'
Autor:
Baron, Y., Lábár, J. L., Lequien, S., Pécz, B., Daubriac, R., Kerdilés, S., ALba, P. Acosta, Marcenat, C., Débarre, D., Lefloch, F., Chiodi, F.
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV)
Externí odkaz:
http://arxiv.org/abs/2406.17511
Autor:
Nath, S., Turan, I., Desvignes, L., Largeau, L., Mauguin, O., Túnica, M., Amato, M., Renard, C., Hallais, G., Débarre, D., Chiodi, F.
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0
Externí odkaz:
http://arxiv.org/abs/2404.02748
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF con
Externí odkaz:
http://arxiv.org/abs/2208.05053
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with low losses
Externí odkaz:
http://arxiv.org/abs/2101.11125
Autor:
Chiodi, F., Bayliss, S. L., Barast, L., Débarre, D., Bouchiat, H., Friend, R. H., Chepelianskii, A. D.
In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing
Externí odkaz:
http://arxiv.org/abs/1711.02451
Publikováno v:
Phys. Rev. B 96, 024503 (2017)
We have realised laser-doped all-silicon superconducting (S)/ normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers critical temperature when increasing the normal metal thickness, a s
Externí odkaz:
http://arxiv.org/abs/1610.08453
Autor:
Vigetti L; Institute for Advanced Biosciences, Biomechanics of Host-Parasite Cell Interactions Team, CNRS UMR 5309, INSERM U1209, Université Grenoble Alpes, Grenoble, France., Touquet B; Institute for Advanced Biosciences, Biomechanics of Host-Parasite Cell Interactions Team, CNRS UMR 5309, INSERM U1209, Université Grenoble Alpes, Grenoble, France., Debarre D; Laboratoire Interdisciplinaire de Physique, CNRS UMR 5588, Université Grenoble Alpes, Grenoble, France., Rose T; Institut Pasteur, Université Paris Cité, Diagnostic Test Innovation and Development Core Facility, Paris, France., Bureau L; Laboratoire Interdisciplinaire de Physique, CNRS UMR 5588, Université Grenoble Alpes, Grenoble, France., Abdallah D; Institute for Advanced Biosciences, Biomechanics of Host-Parasite Cell Interactions Team, CNRS UMR 5309, INSERM U1209, Université Grenoble Alpes, Grenoble, France., Dubacheva GV; Département de Chimie Moléculaire, CNRS UMR 5250, Université Grenoble Alpes, Grenoble, France. galina.dubacheva@univ-grenoble-alpes.fr., Tardieux I; Institute for Advanced Biosciences, Biomechanics of Host-Parasite Cell Interactions Team, CNRS UMR 5309, INSERM U1209, Université Grenoble Alpes, Grenoble, France. isabelle.tardieux@inserm.fr.
Publikováno v:
Nature microbiology [Nat Microbiol] 2024 Nov 04. Date of Electronic Publication: 2024 Nov 04.
We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we could attai
Externí odkaz:
http://arxiv.org/abs/1411.4325
Autor:
Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Debarre, D., Mangelinck, D.
Publikováno v:
Appl. Phys. Lett. 101, 182602 (2012)
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline s
Externí odkaz:
http://arxiv.org/abs/1103.4409
Autor:
Dahlem, F., Kociniewski, T., Marcenat, C., Grockowiak, A., Pascal, L., Achatz, P., Boulmer, J., Debarre, D., Klein, T., Bustarret, E., Courtois, H.
Publikováno v:
Phys. Rev. B 82, 140505(R) (2010)
Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a homogeneous
Externí odkaz:
http://arxiv.org/abs/1007.3598