Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Deb Kumar Pal"'
Publikováno v:
Journal of Family Medicine and Primary Care, Vol 13, Iss 5, Pp 1922-1930 (2024)
Introduction: Cardiovascular diseases (CVDs) have many risk factors; few can be modified through health education. Traditional patient counselling methods fail to impact health behaviours to prevent or reduce the risk of CVDs. Objectives: This study
Externí odkaz:
https://doaj.org/article/a151cdae73044f048d01ba56a65126c9
Publikováno v:
Journal of Family Medicine and Primary Care, Vol 12, Iss 1, Pp 1-3 (2023)
Intimate partner violence (IPV) is considered any type of behavior involving the premeditated use of physical, emotional, or sexual force between two people in an intimate relationship. The prevalence of health-seeking attitude towards IPV in India i
Externí odkaz:
https://doaj.org/article/f900c7a33893498d8de6939ce4d46d59
Publikováno v:
Indian Journal of Community and Family Medicine, Vol 8, Iss 1, Pp 3-4 (2022)
Externí odkaz:
https://doaj.org/article/cd8a5035b3e74532bf8a45150b084078
Autor:
Liang Yew Ng, Elizabeth Kho Ching Tee, Alexander Hoelke, Florin Udrea, S. Pilkington, Marina Antoniou, Wan Azlan bin Wan Zainal Abidin, Deb Kumar Pal
Publikováno v:
Solid-State Electronics. 96:38-43
Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e28b8db4f7fe0f6223b1e6086fe5069
https://doi.org/10.1016/j.sse.2014.04.018
https://doi.org/10.1016/j.sse.2014.04.018
Publikováno v:
ECS Transactions. 34:967-972
Drastically device dimension shrinkage and rigorous requirement in automotive era puts Negative Bias Temperature Instability (NBTI) at the forefront of reliability issue recently. The PMOS parametric degradation during negative bias high temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e4ab38cceb21d929af07ddf31711800
https://doi.org/10.1149/1.3567700
https://doi.org/10.1149/1.3567700
Autor:
S. Pilkington, Elizabeth Kho Ching Tee, Deb Kumar Pal, Florin Udrea, Alexander Hoelke, Marina Antoniou
Publikováno v:
CAS 2012 (International Semiconductor Conference).
This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::110a9258f9eae823e9c482d65ad5a4e5
https://doi.org/10.1109/smicnd.2012.6400763
https://doi.org/10.1109/smicnd.2012.6400763
Autor:
Tong Gee Hong, Wong Jian Sang, Michaelina Ong, Raymond Tan, Lesley Wong Ying Ying, Deb Kumar Pal, Ng Hong Seng
Publikováno v:
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE).
Gate oxide early breakdown was investigated. It was verified that the gate oxide quality is good and failure was due to extrinsic causes. The failure, which was localized at the edge of LOCOS was similar to Kooi effect. However, investigations showed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bd4dc81f829720c0cbf358ea19fb3c5
https://doi.org/10.1109/smelec.2012.6417214
https://doi.org/10.1109/smelec.2012.6417214
Publikováno v:
2010 International Conference on Electronic Devices, Systems and Applications.
The high voltage device can be embedded into conventional shallow trench isolation (STI) logic process. Basically, SVX (Smart Voltage Extension) technique [1, 2] was applied in order to integrate 32V high voltage LDMOS into a standard 0.18 micron low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6197b0f48e5695ccf95b5203b9a5a0
https://doi.org/10.1109/icedsa.2010.5503059
https://doi.org/10.1109/icedsa.2010.5503059
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics.
Rapid increasing demand towards high voltage MOSFETs device integrated in low voltage CMOS analog and digital circuits for automobile and power management application has driven the development of 0.18 um high voltage lateral diffused MOSFET (LDMOS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2396822a42284edfe95313cec44023b
https://doi.org/10.1109/smelec.2008.4770358
https://doi.org/10.1109/smelec.2008.4770358
Publikováno v:
2008 IEEE International Conference on Semiconductor Electronics.
In this work an attempt is made to extract Dual Pearson moments from 1-D Monte Carlo simulated profiles, and these moments are used for 2-D simulations. This approach gives same accurate implant profile as Monte Carlo, but simulation time is signific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6788ff2594dd017207623abce5e6d801
https://doi.org/10.1109/smelec.2008.4770272
https://doi.org/10.1109/smelec.2008.4770272