Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Dean R Denison"'
Autor:
Justin K. Wang, Dean R. Denison
Publikováno v:
SPIE Proceedings.
Wafer fabrication technology is rapidly advancing toward three or four layers of metalization with geometry of 0.35 micrometers and smaller, with aspect ratios of 3:1, and a requirement that the interlayer dielectric be globally planarized. Electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9bc467d71857b82636cbe8cda66abd6
https://doi.org/10.1117/12.156535
https://doi.org/10.1117/12.156535
Publikováno v:
SPIE Proceedings.
An electron cyclotron resonance (ECR) generated oxygen plasma has been used for the chemical vapor deposition (CVD) of Si02 by reacting the oxygen plasma beam with adsorbed silane. This study was done to define the process window for the deposition o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03b079d2748e02a90e9b421dded7196a
https://doi.org/10.1117/12.978055
https://doi.org/10.1117/12.978055
Autor:
Dean R. Denison
Publikováno v:
Journal of Vacuum Science and Technology. 6:214-217
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::644398ae074e51dc011a67028780faa0
https://doi.org/10.1116/1.1492663
https://doi.org/10.1116/1.1492663
Autor:
Jeffrey I. Steinfeld, Larry D. Hartsough, Dean R Denison, F. Read McFeely, David Harradine, Bobbi Roop, John R. Hollahan
Publikováno v:
SPIE Proceedings.
Reactive etching at silicon and silicon-oxide surfaces is customarily carried out in a fluorocarbon plasma. Under such conditions, a large variety of reactive species is generated, making it extremely difficult to elucidate details of the etching mec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a68e6d401baabf4ec0b71c7468ff0677
https://doi.org/10.1117/12.931735
https://doi.org/10.1117/12.931735
Periodical
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.