Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Dean Jennings"'
Autor:
Bruce E. Adams, Dean Jennings, S.G. Nagy, Vijay Parihar, Kai Ma, Stephen Moffatt, Abhilash J. Mayur
Publikováno v:
2007 15th International Conference on Advanced Thermal Processing of Semiconductors.
Nickel silicides serve as the source, drain, and gate contact material in many advanced complementary metal oxide semiconductor (CMOS) logic applications. Nickel has demonstrated numerous advantages over Cobalt and Titanium silicides of earlier techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2446d8a21f40e53a795efb5cb0aeffb5
https://doi.org/10.1109/rtp.2007.4383836
https://doi.org/10.1109/rtp.2007.4383836
Autor:
Simone Severi, Serge Biesemans, E. San Andrés, Sunderraj Thirupapuliyur, Khaled Ahmed, Victor Moroz, Susan Felch, F. Nouri, Taiji Noda, Malgorzata Jurczak, Emmanuel Augendre, Barry O'Sullivan, R. Schreutelkamp, S. Mahapatra, T. Hoffman, Philippe Absil, K. De Meyer, J. Ramos, Dean Jennings, A. De Keersgieter, Vijay Parihar, Luigi Pantisano
Publikováno v:
2006 International Electron Devices Meeting.
A thermo-mechanical stress model (TMS) is presented to explain the impact of sub-melt laser anneal (LA) on SiON dielectric and on the overall transistor performance. An Lgmin reduction of 15nm/5nm for nMOS/pMOS over our poly-Si/SiON reference, with 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96fb6748c550d12f15e03006a2962790
https://doi.org/10.1109/iedm.2006.346917
https://doi.org/10.1109/iedm.2006.346917
Autor:
Aaron Muir Hunter, R. Achutharaman, R. Thakur, Timothy N. Thomas, Vijay Parihar, Haifan Liang, Dean Jennings, J. Ranish, T. Trowbridge, Abhilash J. Mayur, Bruce E. Adams, R. Mcintosh
Publikováno v:
12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004..
The continued scaling of devices in accordance with Moore's law requires activation of some implants such as the source-drain extensions, SDEs, with as little diffusion as possible. New options in thermal processing are described and compared. Therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b51fc1844c9b0a5ae0c9fbb7eb359b86
https://doi.org/10.1109/rtp.2004.1441892
https://doi.org/10.1109/rtp.2004.1441892
Autor:
Dean Jennings, R. Pendse
Publikováno v:
40th Conference Proceedings on Electronic Components and Technology.
The resistance-shift phenomena typically encountered in precision analog devices such as operational amplifiers which use the BiFET structure is discussed and resolved. A test chip consisting of fourteen implant resistors acting as piezoelectric stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::099b4ed2d89fbce605b081797ebcbdb6
https://doi.org/10.1109/ectc.1990.122209
https://doi.org/10.1109/ectc.1990.122209
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
In order to form junctions shallower than 0.1 /spl mu/m required for the source/drain extensions for 0.18 /spl mu/m technology and beyond, boron ions have been implanted in pre-amorphised Si at 1 keV and doses of 1E14-1E15 cm/sup -2/ using an Applied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ebd5fd80c894b6ee27db155f2e141dd
https://doi.org/10.1109/iit.1998.813771
https://doi.org/10.1109/iit.1998.813771
Publikováno v:
MRS Proceedings. 568
As the drive towards the production of 100 nm CMOS devices pick up speed, the practical aspect of transistor shallow junction formation, including a large menu of process integration issues, must now be solved in a short order. The most direct path t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b968242362f8b2002eb6c48f784d34
https://doi.org/10.1557/proc-568-55
https://doi.org/10.1557/proc-568-55
Autor:
Dean Jennings
Publikováno v:
The Journal of the Acoustical Society of America. 129:2348
An apparatus for processing a coherent light pulse comprises a piezoelectric material having an optical interface surface and a surface acoustic wave (SAW) producing device disposed on the piezoelectric material. A coherent light pulse is dithered at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf837dc9546e0f02480fb7349b36e093
https://doi.org/10.1121/1.3582175
https://doi.org/10.1121/1.3582175
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:468
Process integration and in-line metrology are now the key agenda items for formation of ultrashallow junctions for ultralarge scale integration devices. Integration of the complete process sequence from selection of the device layer material through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eb573a506d292ef8f7fb519ebfd3fb4
https://doi.org/10.1116/1.591213
https://doi.org/10.1116/1.591213
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:462
The shallow doping requirements for the next 2–3 device generations can be satisfied by a combination of low-energy ion implantation and rapid-thermal anneal. However, the differing requirements of distinct types of devices preclude the definition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::389f34d26125d6544a70ecaf1ed224c4
https://doi.org/10.1116/1.591212
https://doi.org/10.1116/1.591212
Conference
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